Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering

Wei Zhao; Yabing Qi; Tissa Sajoto; Stephen Barlow; Seth R. Marder; Antoine Kahn

doi:10.1063/1.3491429

Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering

Wei Zhao, Yabing Qi, Tissa Sajoto, Stephen Barlow, Seth R. Marder, Antoine Kahn

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We demonstrate that holes from a p-doped N, N′ -diphenyl- N, N′ -bis(1-naphthyl)- 1, 1′ -biphenyl- 4, 4′ -diamine (α -NPD) layer transfer to an adjacent pentacene film. The spatial separation of carriers from dopants, or remote doping, is demonstrated with a combination of photoemission spectroscopy and current-voltage measurements for a p-doped α -NPD/pentacene heterojunction. Increased conductivity of the pentacene film is observed in both nongated temperature-dependent conductivity and gated thin-film transistor measurements.

Original language	English (US)
Article number	123305
Journal	Applied Physics Letters
Volume	97
Issue number	12
DOIs	https://doi.org/10.1063/1.3491429
State	Published - Sep 20 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3491429

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title = "Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering",

abstract = "We demonstrate that holes from a p-doped N, N′ -diphenyl- N, N′ -bis(1-naphthyl)- 1, 1′ -biphenyl- 4, 4′ -diamine (α -NPD) layer transfer to an adjacent pentacene film. The spatial separation of carriers from dopants, or remote doping, is demonstrated with a combination of photoemission spectroscopy and current-voltage measurements for a p-doped α -NPD/pentacene heterojunction. Increased conductivity of the pentacene film is observed in both nongated temperature-dependent conductivity and gated thin-film transistor measurements.",

author = "Wei Zhao and Yabing Qi and Tissa Sajoto and Stephen Barlow and Marder, {Seth R.} and Antoine Kahn",

note = "Funding Information: Support of this work by the National Science Foundation (Grant No. DMR-1005892), the Princeton MRSEC of the National Science Foundation (Grant No. DMR-0819860), and by Solvay Corporation is gratefully acknowledged. The authors thank Dr. Michael Kr{\"o}ger for help with temperature-dependent conductivity measurements.",

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doi = "10.1063/1.3491429",

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T1 - Remote doping of a pentacene transistor

T2 - Control of charge transfer by molecular-level engineering

AU - Zhao, Wei

AU - Qi, Yabing

AU - Sajoto, Tissa

AU - Barlow, Stephen

AU - Marder, Seth R.

AU - Kahn, Antoine

N1 - Funding Information: Support of this work by the National Science Foundation (Grant No. DMR-1005892), the Princeton MRSEC of the National Science Foundation (Grant No. DMR-0819860), and by Solvay Corporation is gratefully acknowledged. The authors thank Dr. Michael Kröger for help with temperature-dependent conductivity measurements.

PY - 2010/9/20

Y1 - 2010/9/20

N2 - We demonstrate that holes from a p-doped N, N′ -diphenyl- N, N′ -bis(1-naphthyl)- 1, 1′ -biphenyl- 4, 4′ -diamine (α -NPD) layer transfer to an adjacent pentacene film. The spatial separation of carriers from dopants, or remote doping, is demonstrated with a combination of photoemission spectroscopy and current-voltage measurements for a p-doped α -NPD/pentacene heterojunction. Increased conductivity of the pentacene film is observed in both nongated temperature-dependent conductivity and gated thin-film transistor measurements.

AB - We demonstrate that holes from a p-doped N, N′ -diphenyl- N, N′ -bis(1-naphthyl)- 1, 1′ -biphenyl- 4, 4′ -diamine (α -NPD) layer transfer to an adjacent pentacene film. The spatial separation of carriers from dopants, or remote doping, is demonstrated with a combination of photoemission spectroscopy and current-voltage measurements for a p-doped α -NPD/pentacene heterojunction. Increased conductivity of the pentacene film is observed in both nongated temperature-dependent conductivity and gated thin-film transistor measurements.

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M1 - 123305

ER -

Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering

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