Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering

Wei Zhao, Yabing Qi, Tissa Sajoto, Stephen Barlow, Seth R. Marder, Antoine Kahn

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

We demonstrate that holes from a p-doped N, N′ -diphenyl- N, N′ -bis(1-naphthyl)- 1, 1′ -biphenyl- 4, 4′ -diamine (α -NPD) layer transfer to an adjacent pentacene film. The spatial separation of carriers from dopants, or remote doping, is demonstrated with a combination of photoemission spectroscopy and current-voltage measurements for a p-doped α -NPD/pentacene heterojunction. Increased conductivity of the pentacene film is observed in both nongated temperature-dependent conductivity and gated thin-film transistor measurements.

Original languageEnglish (US)
Article number123305
JournalApplied Physics Letters
Volume97
Issue number12
DOIs
StatePublished - Sep 20 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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