Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors under Low Gate-Field Stress - Part I: Two-Stage Model for Lifetime Prediction

Keyphrases

• Accelerated Stress 33%
• Charge Trapping 66%
• Current Degradation 33%
• Defect Creation 66%
• Drain Current 33%
• Drain Current Degradation 33%
• Effective Threshold Voltage 33%
• Exponential Expressions 66%
• Exponential Fit 33%
• Field Regions 33%
• Gate Insulator 66%
• High Stability 33%
• Highly Stable 100%
• Hydrogenated Amorphous Silicon 33%
• Initial Degradation 33%
• Lifetime Prediction 100%
• Linear Mode 33%
• Local Channel 33%
• Local Threshold 33%
• Room Temperature Stability 66%
• Saturation Mode 33%
• SiNx 66%
• Stretched Exponential 100%
• Thermalization 33%
• Threshold Voltage Shift 33%
• Two-stage Model 100%

Engineering

• Current Drain 50%
• Electron Channel 25%
• Field Region 25%
• Fitting Parameter 25%
• Hydrogenated Amorphous Silicon 25%
• Temperature Stability 50%
• Temperature Time 25%

Material Science

• Charge Trapping 50%
• Silicon Nitride 25%