Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors under Low Gate-Field Stress - Part I: Two-Stage Model for Lifetime Prediction

Engineering

• Stress Field 100%
• Thin film transistors 100%
• Room Temperature 75%
• Current Drain 50%
• Temperature Stability 50%
• Analytical Model 25%
• Nitride 25%
• Single Curve 25%
• Fitting Parameter 25%
• Hydrogenated Amorphous Silicon 25%
• Field Region 25%
• Carrier Concentration 25%

Material Science

• Stress Field 100%
• Thin-Film Transistor 100%
• Amorphous Silicon 100%
• Charge Trapping 50%
• Carrier Concentration 25%
• Silicon Nitride 25%

Keyphrases

• Charge Trapping 66%
• Silicon Channel 33%
• Initial Degradation 33%
• Effective Threshold Voltage 33%