Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors under Low Gate-Field Stress - Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence

Material Science

• Stress Field 100%
• Thin-Film Transistor 100%
• Amorphous Silicon 100%
• Reactive Ion Etching 33%
• Dielectric Material 33%
• Wet Etching 33%
• Charge Trapping 33%
• Silicon Nitride 33%

Keyphrases

• Fabrication Conditions 100%
• Gate-voltage Dependence 100%
• Wet Etching 66%
• Reliability Lifetime 33%
• Low Gate Voltage 33%
• Reliability Characterization 33%
• Defect Generation 33%

Engineering

• Channel Layer 33%
• Continuous Operation 33%
• Gate Dielectric 33%
• Step Etch 33%