Relaxed SiGe layers with high Ge content by compliant substrates

H. Yin; R. L. Peterson; K. D. Hobart; S. R. Shieh; T. S. Duffy; J. C. Sturm

doi:10.1557/proc-765-d4.7/g1.7

Relaxed SiGe layers with high Ge content by compliant substrates

H. Yin, R. L. Peterson, K. D. Hobart, S. R. Shieh, T. S. Duffy, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

Abstract

Relaxed, high Ge content SiGe layers have been realized using stress balance on a compliant borophosphorosilicate glass (BPSG). A 30-nm fully-strained Si_0.7Ge_0.3 layer was transferred onto a 1 μm BPSG film by wafer-bonding and Smart-cut® processes, after which the continuous Si_0.7Ge_0.3 film was patterned into small islands to allow for lateral expansion. After the strain in Si_0.7Ge_0.3 islands was released by the lateral expansion resulting from the flow of the BPSG, a Si_0.4Ge_0.6 layer was commensurately deposited under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films, resulting in a larger in-plane lattice constant than that of relaxed Si_0.7Ge_0.3. With a thiner (6 nm) Si_0.7Ge_0.3 starting film, an in-plane lattice constant equivalent to fully-relaxed Si_0.45Ge_0.55 has been obtained.

Original language	English (US)
Pages (from-to)	147-151
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	765
DOIs	https://doi.org/10.1557/proc-765-d4.7/g1.7
State	Published - 2003
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 24 2003

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

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title = "Relaxed SiGe layers with high Ge content by compliant substrates",

abstract = "Relaxed, high Ge content SiGe layers have been realized using stress balance on a compliant borophosphorosilicate glass (BPSG). A 30-nm fully-strained Si0.7Ge0.3 layer was transferred onto a 1 μm BPSG film by wafer-bonding and Smart-cut{\textregistered} processes, after which the continuous Si0.7Ge0.3 film was patterned into small islands to allow for lateral expansion. After the strain in Si0.7Ge0.3 islands was released by the lateral expansion resulting from the flow of the BPSG, a Si0.4Ge0.6 layer was commensurately deposited under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films, resulting in a larger in-plane lattice constant than that of relaxed Si0.7Ge0.3. With a thiner (6 nm) Si0.7Ge0.3 starting film, an in-plane lattice constant equivalent to fully-relaxed Si0.45Ge0.55 has been obtained.",

author = "H. Yin and Peterson, {R. L.} and Hobart, {K. D.} and Shieh, {S. R.} and Duffy, {T. S.} and Sturm, {J. C.}",

year = "2003",

doi = "10.1557/proc-765-d4.7/g1.7",

language = "English (US)",

volume = "765",

pages = "147--151",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology ; Conference date: 22-04-2003 Through 24-04-2003",

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TY - JOUR

T1 - Relaxed SiGe layers with high Ge content by compliant substrates

AU - Yin, H.

AU - Peterson, R. L.

AU - Hobart, K. D.

AU - Shieh, S. R.

AU - Duffy, T. S.

AU - Sturm, J. C.

PY - 2003

Y1 - 2003

N2 - Relaxed, high Ge content SiGe layers have been realized using stress balance on a compliant borophosphorosilicate glass (BPSG). A 30-nm fully-strained Si0.7Ge0.3 layer was transferred onto a 1 μm BPSG film by wafer-bonding and Smart-cut® processes, after which the continuous Si0.7Ge0.3 film was patterned into small islands to allow for lateral expansion. After the strain in Si0.7Ge0.3 islands was released by the lateral expansion resulting from the flow of the BPSG, a Si0.4Ge0.6 layer was commensurately deposited under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films, resulting in a larger in-plane lattice constant than that of relaxed Si0.7Ge0.3. With a thiner (6 nm) Si0.7Ge0.3 starting film, an in-plane lattice constant equivalent to fully-relaxed Si0.45Ge0.55 has been obtained.

AB - Relaxed, high Ge content SiGe layers have been realized using stress balance on a compliant borophosphorosilicate glass (BPSG). A 30-nm fully-strained Si0.7Ge0.3 layer was transferred onto a 1 μm BPSG film by wafer-bonding and Smart-cut® processes, after which the continuous Si0.7Ge0.3 film was patterned into small islands to allow for lateral expansion. After the strain in Si0.7Ge0.3 islands was released by the lateral expansion resulting from the flow of the BPSG, a Si0.4Ge0.6 layer was commensurately deposited under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films, resulting in a larger in-plane lattice constant than that of relaxed Si0.7Ge0.3. With a thiner (6 nm) Si0.7Ge0.3 starting film, an in-plane lattice constant equivalent to fully-relaxed Si0.45Ge0.55 has been obtained.

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U2 - 10.1557/proc-765-d4.7/g1.7

DO - 10.1557/proc-765-d4.7/g1.7

M3 - Conference article

AN - SCOPUS:0242493054

SN - 0272-9172

VL - 765

SP - 147

EP - 151

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology

Y2 - 22 April 2003 through 24 April 2003

ER -

Relaxed SiGe layers with high Ge content by compliant substrates

Abstract

All Science Journal Classification (ASJC) codes

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