Relaxed SiGe Layers with High Ge Content by Compliant Substrate

H. Yin, R. L. Peterson, K. D. Hobart, S. R. Shieh, T. S. Duffy, J. C. Sturm

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

Relaxed, high Ge content SiGe layers have been realized using stress balance on a compliant borophosphorosilicate glass (BPSG). A 30-nm fully-strained Si 0.7Ge 0.3 layer was transferred onto a 1 μm BPSG film by wafer-bonding and Smart-cut® processes, after which the continuous Si 0.7Ge 0.3 film was patterned into small islands to allow for lateral expansion. After the strain in Si 0.7Ge 0.3 islands was released by the lateral expansion resulting from the flow of the BPSG, a Si 0.4Ge 0.6 layer was commensurately deposited under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films, resulting in a larger inplane lattice constant than that of relaxed Si 0.7Ge 0.3. With a thiner (6 nm) Si 0.7Ge 0.3 starting film, an in-plane lattice constant equivalent to fully-relaxed Si 0.45Ge 0.55 has been obtained.

Original languageEnglish (US)
Pages (from-to)15-19
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume768
StatePublished - Dec 1 2003
EventIntegration of Heterogeneous Thin-Film Materials and Devices - San Francisco, CA, United States
Duration: Apr 23 2003Apr 24 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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