@inproceedings{4cdad447bd3c44a8bcdca056c8ab237e,
title = "REFLECTIVITY OF SILICON-ON-SAPPHIRE DURING PULSED LASER ANNEALING.",
abstract = "A visible probe laser (632. 8 nm) was used to directly observe motion of the melt front in silicon-on-sapphire during pulsed laser annealing. The average penetration and regrowth velocities have been determined to be 13 and 6. 5 m/sec. respectively. These values are in agreement with recent conductivity measurements and heat flow calculations. In addition, the data demonstrate that the high-reflectivity phase can penetrate at least 0. 5 mu m (Si thickness) and requires a significant amount of time to do so. These results are further evidence that the high-reflectivity phase is molten silicon. 6 refs.",
author = "Chen, {Y. H.} and Lyon, {S. A.}",
year = "1984",
language = "English (US)",
isbn = "0444009035",
series = "Materials Research Society Symposia Proceedings",
publisher = "North-Holland",
pages = "173--177",
editor = "Fan, {John C.C.} and Johnson, {Noble M.}",
booktitle = "Materials Research Society Symposia Proceedings",
}