REFLECTIVITY OF SILICON-ON-SAPPHIRE DURING PULSED LASER ANNEALING.

Y. H. Chen, S. A. Lyon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A visible probe laser (632. 8 nm) was used to directly observe motion of the melt front in silicon-on-sapphire during pulsed laser annealing. The average penetration and regrowth velocities have been determined to be 13 and 6. 5 m/sec. respectively. These values are in agreement with recent conductivity measurements and heat flow calculations. In addition, the data demonstrate that the high-reflectivity phase can penetrate at least 0. 5 mu m (Si thickness) and requires a significant amount of time to do so. These results are further evidence that the high-reflectivity phase is molten silicon. 6 refs.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsJohn C.C. Fan, Noble M. Johnson
PublisherNorth-Holland
Pages173-177
Number of pages5
ISBN (Print)0444009035
StatePublished - Dec 1 1984
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume23
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Chen, Y. H., & Lyon, S. A. (1984). REFLECTIVITY OF SILICON-ON-SAPPHIRE DURING PULSED LASER ANNEALING. In J. C. C. Fan, & N. M. Johnson (Eds.), Materials Research Society Symposia Proceedings (pp. 173-177). (Materials Research Society Symposia Proceedings; Vol. 23). North-Holland.