Reduction of the Au/p-ZnSe(100) Schottky barrier height using a thin Se interlayer

W. Chen, J. Gaines, C. Ponzoni, D. Olego, P. S. Mangat, P. Soukiassian, A. Kahn

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

We present a study of the formation of Schottky barriers (SBs) between Au and p-ZnSe(100) using high-resolution synchrotron-radiation photoemission spectroscopy (PES). PES is a powerful technique in that provides information on interface chemical reaction, intermixing, growth mode of the metal layer and intermediate values of the barrier during the interface formation. The measurements of SB heights by PES relies on the determination of the Fermi level (EF) position relative to the valence band maximum (VBM) on the clean surface, and of the shift of the semiconductor core levels as a function of metal deposition. Using this technique, we found EF initially to be at 1.1 eV above the VBM (1.1 eV downward band bending) and to assume a final position at 1.13 eV above VBM for thick Au overlayers. The 1.13 eV hole barrier is consistent with previously reported PES results. The analysis of the core level spectra shows that Au grows in a layer-by-layer mode, and that no significant chemical reaction nor intermixing takes place at room temperature. This result will be discussed in terms of the large electronegativity and work function of Se.

Original languageEnglish (US)
Number of pages1
JournalJournal of Crystal Growth
Volume138
Issue number1-4
DOIs
StatePublished - Jan 1 1994
EventProceedings of the 6th International Conference on II-VI Compounds and Related Optoelectronic Materials - Newport, RI, USA
Duration: Sep 13 1993Sep 17 1993

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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