Reduction of short channel effects in SOI MOSFETs with 35 nm channel width and 70 nm channel length

Effendi Leobandung, Stephen Y. Chou

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

This paper reports the fabrication and characterization of SOI NMOSFETs with channel width as narrow as 35 nm. For the first time, it is observed that using a narrow channel width, the short channel effects in SOI MOSFETs can be significantly reduced because the gate wrapped around the narrow channel side wall allowing a better gate control in horizontal and vertical direction. With a 35 nm channel width, well-behaved SOI NMOSFETs with effective channel length of 70 nm can be realized.

Original languageEnglish (US)
Pages110-111
Number of pages2
StatePublished - Jan 1 1996
Externally publishedYes
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Leobandung, E., & Chou, S. Y. (1996). Reduction of short channel effects in SOI MOSFETs with 35 nm channel width and 70 nm channel length. 110-111. Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .