Reduction of Series Resistance in Top-Gate ZnO Thin-Film Transistors by Air Exposure and Oxygen Plasma Treatment

Keyphrases

• Resistivity 100%
• Top Gate 100%
• Self-aligned 100%
• Air Exposure 100%
• Plasma Treatment 100%
• Oxygen Plasma Treatment 100%
• ZnO Thin Film Transistor 100%
• Series Resistance 100%
• Air Oxygen 100%
• Carrier Concentration 66%
• Parasitic Capacitance 66%
• Source/drain 66%
• Microstructure 33%
• Thin-film Transistors 33%
• Ambient Air 33%
• Bottom Gate 33%
• Sol-gel 33%
• Oxygen Vacancy 33%
• Non-self 33%
• As-deposited 33%
• Large Series 33%
• Deposition Methods 33%
• High Resistivity 33%
• Treatment Conditions 33%
• Common Defects 33%
• O Plasma 33%
• Output Saturation 33%
• Semiconductor ZnO 33%
• Nanostructured ZnO Films 33%
• ZnO Thin Films 33%
• Traditional Donors 33%
• Saturation Current 33%
• Channel Region 33%
• ZnO Deposition 33%
• Top-gate Structure 33%

Engineering

• Plasma Treatment 100%
• Series Resistance 100%
• Thin film transistors 100%
• Parasitic Capacitance 40%
• Carrier Concentration 40%
• Thin Films 20%
• Ambient Air 20%
• Oxygen Vacancy 20%
• Nanocrystalline 20%
• Deposition Method 20%
• Channel Region 20%

Material Science

• Thin-Film Transistor 100%
• ZnO 100%
• Electrical Resistivity 50%
• Carrier Concentration 25%
• Capacitance 25%
• Thin Films 12%
• Sol-Gel 12%
• Oxygen Vacancy 12%
• Nanocrystalline 12%