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Dive into the research topics of 'Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors'. Together they form a unique fingerprint.- Sort by
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A. Matutinović-Krstelj, E. J. Prinz, P. V. Schwartz, J. C. Sturm
Research output: Contribution to journal › Article › peer-review