Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors

A. Matutinović-Krstelj; E. J. Prinz; P. V. Schwartz; J. C. Sturm

doi:10.1109/55.75751

Reduction of p⁺-n⁺ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors

A. Matutinović-Krstelj, E. J. Prinz, P. V. Schwartz, J. C. Sturm

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report a three order of magnitude reduction in parasitic tunneling current at heavily doped p⁺-n⁺ Si/Si and SiGe/Si junctions grown by rapid thermal epitaxial chemical vapor deposition compared to previously reported results in Si junctions fabricated by ion implantation [1]. The results are very important for the reduction of base current in scaled bipolar transistors, especially for SiGe heterojunction bipolar transistors (HBT’s), and also show the high quality of the epitaxial interface.

Original language	English (US)
Pages (from-to)	163-165
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	4
DOIs	https://doi.org/10.1109/55.75751
State	Published - Apr 1991

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.75751

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title = "Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors",

abstract = "We report a three order of magnitude reduction in parasitic tunneling current at heavily doped p+-n+ Si/Si and SiGe/Si junctions grown by rapid thermal epitaxial chemical vapor deposition compared to previously reported results in Si junctions fabricated by ion implantation [1]. The results are very important for the reduction of base current in scaled bipolar transistors, especially for SiGe heterojunction bipolar transistors (HBT{\textquoteright}s), and also show the high quality of the epitaxial interface.",

author = "A. Matutinovi{\'c}-Krstelj and Prinz, {E. J.} and Schwartz, {P. V.} and Sturm, {J. C.}",

note = "Funding Information: Manuscript received November 2, 1990; revised January 13, 1991. This work was supported by ONR under Contract {"}14-904-1316 and by NSF under Grant ECS-86157227. The authors are with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. IEEE Log Number 9143219. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

year = "1991",

month = apr,

doi = "10.1109/55.75751",

language = "English (US)",

volume = "12",

pages = "163--165",

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T1 - Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors

AU - Matutinović-Krstelj, A.

AU - Prinz, E. J.

AU - Schwartz, P. V.

AU - Sturm, J. C.

N1 - Funding Information: Manuscript received November 2, 1990; revised January 13, 1991. This work was supported by ONR under Contract "14-904-1316 and by NSF under Grant ECS-86157227. The authors are with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. IEEE Log Number 9143219. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 1991/4

Y1 - 1991/4

N2 - We report a three order of magnitude reduction in parasitic tunneling current at heavily doped p+-n+ Si/Si and SiGe/Si junctions grown by rapid thermal epitaxial chemical vapor deposition compared to previously reported results in Si junctions fabricated by ion implantation [1]. The results are very important for the reduction of base current in scaled bipolar transistors, especially for SiGe heterojunction bipolar transistors (HBT’s), and also show the high quality of the epitaxial interface.

AB - We report a three order of magnitude reduction in parasitic tunneling current at heavily doped p+-n+ Si/Si and SiGe/Si junctions grown by rapid thermal epitaxial chemical vapor deposition compared to previously reported results in Si junctions fabricated by ion implantation [1]. The results are very important for the reduction of base current in scaled bipolar transistors, especially for SiGe heterojunction bipolar transistors (HBT’s), and also show the high quality of the epitaxial interface.

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Reduction of p⁺-n⁺ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors

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