We report a three order of magnitude reduction in parasitic tunneling current at heavily doped p+-n+ Si/Si and SiGe/Si junctions grown by rapid thermal epitaxial chemical vapor deposition compared to previously reported results in Si junctions fabricated by ion implantation . The results are very important for the reduction of base current in scaled bipolar transistors, especially for SiGe heterojunction bipolar transistors (HBT’s), and also show the high quality of the epitaxial interface.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Apr 1991|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering