Reduction of p+-n+ Junction Tunneling Current for Base Current Improvement in Si/SiGe/Si Heterojunction Bipolar Transistors

A. Matutinović-Krstelj, E. J. Prinz, P. V. Schwartz, James Christopher Sturm

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We report a three order of magnitude reduction in parasitic tunneling current at heavily doped p+-n+ Si/Si and SiGe/Si junctions grown by rapid thermal epitaxial chemical vapor deposition compared to previously reported results in Si junctions fabricated by ion implantation [1]. The results are very important for the reduction of base current in scaled bipolar transistors, especially for SiGe heterojunction bipolar transistors (HBT’s), and also show the high quality of the epitaxial interface.

Original languageEnglish (US)
Pages (from-to)163-165
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number4
DOIs
StatePublished - Jan 1 1991

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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