Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions

Sushobhan Avasthi; Grigory Vertelov; Jeffrey Schwartz; James C. Sturm

doi:10.1109/PVSC.2009.5411419

Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions

Sushobhan Avasthi, Grigory Vertelov, Jeffrey Schwartz, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

We present an approach for silicon (100) surface passivation using the organic small molecule, 1-10 phenanthrenequinone. Lifetime measurements show that on passivated silicon surfaces, recombination velocities of less than 100 cm/s can be achieved. Such electrically inactive surfaces are used to demonstrate a wide-bandgap organic/silicon heterojunction which reduces the effective minority carrier surface recombination at the metal/silicon contact compared to a similar structure without the organic layer.

Original language	English (US)
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	1681-1685
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2009.5411419
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	6/7/09 → 6/12/09

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2009.5411419

Cite this

Avasthi, S., Vertelov, G., Schwartz, J., & Sturm, J. C. (2009). Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 1681-1685). Article 5411419 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411419

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title = "Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions",

abstract = "We present an approach for silicon (100) surface passivation using the organic small molecule, 1-10 phenanthrenequinone. Lifetime measurements show that on passivated silicon surfaces, recombination velocities of less than 100 cm/s can be achieved. Such electrically inactive surfaces are used to demonstrate a wide-bandgap organic/silicon heterojunction which reduces the effective minority carrier surface recombination at the metal/silicon contact compared to a similar structure without the organic layer.",

author = "Sushobhan Avasthi and Grigory Vertelov and Jeffrey Schwartz and Sturm, {James C.}",

year = "2009",

doi = "10.1109/PVSC.2009.5411419",

language = "English (US)",

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series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "1681--1685",

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note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

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Avasthi, S, Vertelov, G, Schwartz, J & Sturm, JC 2009, Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411419, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1681-1685, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 6/7/09. https://doi.org/10.1109/PVSC.2009.5411419

Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions. / Avasthi, Sushobhan; Vertelov, Grigory; Schwartz, Jeffrey et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 1681-1685 5411419 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Schwartz, Jeffrey

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AB - We present an approach for silicon (100) surface passivation using the organic small molecule, 1-10 phenanthrenequinone. Lifetime measurements show that on passivated silicon surfaces, recombination velocities of less than 100 cm/s can be achieved. Such electrically inactive surfaces are used to demonstrate a wide-bandgap organic/silicon heterojunction which reduces the effective minority carrier surface recombination at the metal/silicon contact compared to a similar structure without the organic layer.

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Y2 - 7 June 2009 through 12 June 2009

ER -

Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions

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