Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions

Sushobhan Avasthi, Grigory Vertelov, Jeffrey Schwartz, James C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We present an approach for silicon (100) surface passivation using the organic small molecule, 1-10 phenanthrenequinone. Lifetime measurements show that on passivated silicon surfaces, recombination velocities of less than 100 cm/s can be achieved. Such electrically inactive surfaces are used to demonstrate a wide-bandgap organic/silicon heterojunction which reduces the effective minority carrier surface recombination at the metal/silicon contact compared to a similar structure without the organic layer.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages1681-1685
Number of pages5
DOIs
StatePublished - Dec 1 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
CountryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Avasthi, S., Vertelov, G., Schwartz, J., & Sturm, J. C. (2009). Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 1681-1685). [5411419] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411419