Reconstructions and phase transitions at semiconductor surfaces: Ge(111)

A. Selloni; Noboru Takeuchi; E. Tosatti

doi:10.1016/0039-6028(95)00102-6

Reconstructions and phase transitions at semiconductor surfaces: Ge(111)

A. Selloni, Noboru Takeuchi, E. Tosatti

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

First principles molecular dynamics studies of the low, intermediate, and high temperature phases of Ge(111) are reviewed. The atomic structure and electronic properties of the c(2 × 8) reconstruction, the diffusion of Ge adatoms at the c(2 × 8) → (1 × 1) disordering transition at T ∼ 300°C, and the behavior of Ge(111) close to the bulk melting temperature are discussed.

Original language	English (US)
Pages (from-to)	995-1001
Number of pages	7
Journal	Surface Science
Volume	331-333
Issue number	PART B
DOIs	https://doi.org/10.1016/0039-6028(95)00102-6
State	Published - Jul 1 1995
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Keywords

Density functional calculations
Germanium
Low index single crystal surfaces
Molecular dynamics
Surface diffusion
Surface melting

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10.1016/0039-6028(95)00102-6

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@article{80c41346dc3840e29336f31ce6249c5c,

title = "Reconstructions and phase transitions at semiconductor surfaces: Ge(111)",

abstract = "First principles molecular dynamics studies of the low, intermediate, and high temperature phases of Ge(111) are reviewed. The atomic structure and electronic properties of the c(2 × 8) reconstruction, the diffusion of Ge adatoms at the c(2 × 8) → (1 × 1) disordering transition at T ∼ 300°C, and the behavior of Ge(111) close to the bulk melting temperature are discussed.",

keywords = "Density functional calculations, Germanium, Low index single crystal surfaces, Molecular dynamics, Surface diffusion, Surface melting",

author = "A. Selloni and Noboru Takeuchi and E. Tosatti",

year = "1995",

month = jul,

day = "1",

doi = "10.1016/0039-6028(95)00102-6",

language = "English (US)",

volume = "331-333",

pages = "995--1001",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "PART B",

}

TY - JOUR

T1 - Reconstructions and phase transitions at semiconductor surfaces

T2 - Ge(111)

AU - Selloni, A.

AU - Takeuchi, Noboru

AU - Tosatti, E.

PY - 1995/7/1

Y1 - 1995/7/1

N2 - First principles molecular dynamics studies of the low, intermediate, and high temperature phases of Ge(111) are reviewed. The atomic structure and electronic properties of the c(2 × 8) reconstruction, the diffusion of Ge adatoms at the c(2 × 8) → (1 × 1) disordering transition at T ∼ 300°C, and the behavior of Ge(111) close to the bulk melting temperature are discussed.

AB - First principles molecular dynamics studies of the low, intermediate, and high temperature phases of Ge(111) are reviewed. The atomic structure and electronic properties of the c(2 × 8) reconstruction, the diffusion of Ge adatoms at the c(2 × 8) → (1 × 1) disordering transition at T ∼ 300°C, and the behavior of Ge(111) close to the bulk melting temperature are discussed.

KW - Density functional calculations

KW - Germanium

KW - Low index single crystal surfaces

KW - Molecular dynamics

KW - Surface diffusion

KW - Surface melting

UR - http://www.scopus.com/inward/record.url?scp=0029341590&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029341590&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(95)00102-6

DO - 10.1016/0039-6028(95)00102-6

M3 - Article

AN - SCOPUS:0029341590

SN - 0039-6028

VL - 331-333

SP - 995

EP - 1001

JO - Surface Science

JF - Surface Science

IS - PART B

ER -

Reconstructions and phase transitions at semiconductor surfaces: Ge(111)

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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