Reconstructions and phase transitions at semiconductor surfaces: Ge(111)

A. Selloni, Noboru Takeuchi, E. Tosatti

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

First principles molecular dynamics studies of the low, intermediate, and high temperature phases of Ge(111) are reviewed. The atomic structure and electronic properties of the c(2 × 8) reconstruction, the diffusion of Ge adatoms at the c(2 × 8) → (1 × 1) disordering transition at T ∼ 300°C, and the behavior of Ge(111) close to the bulk melting temperature are discussed.

Original languageEnglish (US)
Pages (from-to)995-1001
Number of pages7
JournalSurface Science
Volume331-333
Issue numberPART B
DOIs
StatePublished - Jul 1 1995
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Keywords

  • Density functional calculations
  • Germanium
  • Low index single crystal surfaces
  • Molecular dynamics
  • Surface diffusion
  • Surface melting

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