RECENT PROGRESS IN THE THEORY OF AMORPHOUS SEMICONDUCTORS.

Morrel H. Cohen; C. M. Soukoulis; E. N. Economou

RECENT PROGRESS IN THE THEORY OF AMORPHOUS SEMICONDUCTORS.

Morrel H. Cohen, C. M. Soukoulis, E. N. Economou

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Abstract

This paper discussed the complexity of the problem of constructing theories of electronic structure and properties of amorphous semiconductors. The paper showed that these are only two kinds of sharp bounds to energy bands, normal band edges and Lifshitz limits, with essentially universal behavior of the density of states near each type of bound. The paper raises the question of the extent to which the properties of disordered materials associated with band edges display universal behavior, independent of details of structure and disorder.

Original language	English (US)
Title of host publication	Phys of Disord Mater
Publisher	Plenum Press (Inst for Amorphous Stud Ser)
Pages	305-326
Number of pages	22
ISBN (Print)	0306420740
State	Published - 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "RECENT PROGRESS IN THE THEORY OF AMORPHOUS SEMICONDUCTORS.",

abstract = "This paper discussed the complexity of the problem of constructing theories of electronic structure and properties of amorphous semiconductors. The paper showed that these are only two kinds of sharp bounds to energy bands, normal band edges and Lifshitz limits, with essentially universal behavior of the density of states near each type of bound. The paper raises the question of the extent to which the properties of disordered materials associated with band edges display universal behavior, independent of details of structure and disorder.",

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year = "1985",

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RECENT PROGRESS IN THE THEORY OF AMORPHOUS SEMICONDUCTORS.

Abstract

All Science Journal Classification (ASJC) codes

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