This paper discussed the complexity of the problem of constructing theories of electronic structure and properties of amorphous semiconductors. The paper showed that these are only two kinds of sharp bounds to energy bands, normal band edges and Lifshitz limits, with essentially universal behavior of the density of states near each type of bound. The paper raises the question of the extent to which the properties of disordered materials associated with band edges display universal behavior, independent of details of structure and disorder.
|Original language||English (US)|
|Title of host publication||Phys of Disord Mater|
|Publisher||Plenum Press (Inst for Amorphous Stud Ser)|
|Number of pages||22|
|State||Published - Dec 1 1985|
All Science Journal Classification (ASJC) codes