RECENT PROGRESS IN THE THEORY OF AMORPHOUS SEMICONDUCTORS.

Morrel H. Cohen, C. M. Soukoulis, E. N. Economou

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Scopus citations

Abstract

This paper discussed the complexity of the problem of constructing theories of electronic structure and properties of amorphous semiconductors. The paper showed that these are only two kinds of sharp bounds to energy bands, normal band edges and Lifshitz limits, with essentially universal behavior of the density of states near each type of bound. The paper raises the question of the extent to which the properties of disordered materials associated with band edges display universal behavior, independent of details of structure and disorder.

Original languageEnglish (US)
Title of host publicationPhys of Disord Mater
PublisherPlenum Press (Inst for Amorphous Stud Ser)
Pages305-326
Number of pages22
ISBN (Print)0306420740
StatePublished - Dec 1 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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