Realization of an interacting two-valley AlAs bilayer system

K. Vakili; Y. P. Shkolnikov; E. Tutuc; E. P. De Poortere; M. Shayegan

doi:10.1103/PhysRevLett.92.186404

Realization of an interacting two-valley AlAs bilayer system

K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, M. Shayegan

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8 Scopus citations

Abstract

The fabrication of a novel bilayer system composed of two AlAs quantum wells (QW) with different widths was presented. The Si-modulation doped AlAs bilayer grown by molecular beam epitaxy on a GaAs (100) substrate was studied. The X-point conduction-band electrons were forced in the two layers to occupy valleys with different contours, electron effective masses and g factors. The realization of the bilayer system using magnetotransport measurements and the observation of a phase-coherent was also demonstrated.

Original language	English (US)
Article number	186404
Pages (from-to)	186404-1-186404-4
Journal	Physical review letters
Volume	92
Issue number	18
DOIs	https://doi.org/10.1103/PhysRevLett.92.186404
State	Published - May 7 2004

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.92.186404

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title = "Realization of an interacting two-valley AlAs bilayer system",

abstract = "The fabrication of a novel bilayer system composed of two AlAs quantum wells (QW) with different widths was presented. The Si-modulation doped AlAs bilayer grown by molecular beam epitaxy on a GaAs (100) substrate was studied. The X-point conduction-band electrons were forced in the two layers to occupy valleys with different contours, electron effective masses and g factors. The realization of the bilayer system using magnetotransport measurements and the observation of a phase-coherent was also demonstrated.",

author = "K. Vakili and Shkolnikov, {Y. P.} and E. Tutuc and {De Poortere}, {E. P.} and M. Shayegan",

note = "Funding Information: We thank A. H. MacDonald, R. Winkler, and P. C. Klipstein for helpful discussions, and the NSF and the Alexander von Humboldt Foundation for financial support. Part of the work was performed at the Florida National High Magnetic Field Laboratory, which is also supported by the NSF; we thank E. Palm, T. Murphy, and G. Jones for technical support.",

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doi = "10.1103/PhysRevLett.92.186404",

language = "English (US)",

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T1 - Realization of an interacting two-valley AlAs bilayer system

AU - Vakili, K.

AU - Shkolnikov, Y. P.

AU - Tutuc, E.

AU - De Poortere, E. P.

AU - Shayegan, M.

N1 - Funding Information: We thank A. H. MacDonald, R. Winkler, and P. C. Klipstein for helpful discussions, and the NSF and the Alexander von Humboldt Foundation for financial support. Part of the work was performed at the Florida National High Magnetic Field Laboratory, which is also supported by the NSF; we thank E. Palm, T. Murphy, and G. Jones for technical support.

PY - 2004/5/7

Y1 - 2004/5/7

N2 - The fabrication of a novel bilayer system composed of two AlAs quantum wells (QW) with different widths was presented. The Si-modulation doped AlAs bilayer grown by molecular beam epitaxy on a GaAs (100) substrate was studied. The X-point conduction-band electrons were forced in the two layers to occupy valleys with different contours, electron effective masses and g factors. The realization of the bilayer system using magnetotransport measurements and the observation of a phase-coherent was also demonstrated.

AB - The fabrication of a novel bilayer system composed of two AlAs quantum wells (QW) with different widths was presented. The Si-modulation doped AlAs bilayer grown by molecular beam epitaxy on a GaAs (100) substrate was studied. The X-point conduction-band electrons were forced in the two layers to occupy valleys with different contours, electron effective masses and g factors. The realization of the bilayer system using magnetotransport measurements and the observation of a phase-coherent was also demonstrated.

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DO - 10.1103/PhysRevLett.92.186404

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JO - Physical review letters

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Realization of an interacting two-valley AlAs bilayer system

Abstract

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