Realization of an interacting two-valley AlAs bilayer system

K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, M. Shayegan

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The fabrication of a novel bilayer system composed of two AlAs quantum wells (QW) with different widths was presented. The Si-modulation doped AlAs bilayer grown by molecular beam epitaxy on a GaAs (100) substrate was studied. The X-point conduction-band electrons were forced in the two layers to occupy valleys with different contours, electron effective masses and g factors. The realization of the bilayer system using magnetotransport measurements and the observation of a phase-coherent was also demonstrated.

Original languageEnglish (US)
Article number187003
Pages (from-to)186404-1-186404-4
JournalPhysical review letters
Issue number18
StatePublished - May 7 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Vakili, K., Shkolnikov, Y. P., Tutuc, E., De Poortere, E. P., & Shayegan, M. (2004). Realization of an interacting two-valley AlAs bilayer system. Physical review letters, 92(18), 186404-1-186404-4. [187003].