The fabrication of a novel bilayer system composed of two AlAs quantum wells (QW) with different widths was presented. The Si-modulation doped AlAs bilayer grown by molecular beam epitaxy on a GaAs (100) substrate was studied. The X-point conduction-band electrons were forced in the two layers to occupy valleys with different contours, electron effective masses and g factors. The realization of the bilayer system using magnetotransport measurements and the observation of a phase-coherent was also demonstrated.
|Original language||English (US)|
|Journal||Physical review letters|
|State||Published - May 7 2004|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)