TY - JOUR
T1 - Realization of a Valley Superlattice
AU - Mueed, M. A.
AU - Hossain, Md Shafayat
AU - Jo, I.
AU - Pfeiffer, L. N.
AU - West, K. W.
AU - Baldwin, K. W.
AU - Shayegan, M.
N1 - Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/7/16
Y1 - 2018/7/16
N2 - In a number of widely studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spinlike degree of freedom at the degenerate conduction band minima, also known as "valleys." External symmetry-breaking fields such as mechanical strain, or electric or magnetic fields, can tune the valley polarization of these materials, making them suitable candidates for "valleytronics." Here we study a quantum well of AlAs, where the two-dimensional electrons reside in two energetically degenerate valleys. By fabricating a strain-inducing grating on the sample surface, we engineer a spatial modulation of the electron population in different valleys, i.e., a "valley superlattice" in the quantum well plane. Our results establish a novel manipulation technique of the valley degree of freedom, paving the way to realizing a valley-selective layered structure in multivalley materials, with potential application in valleytronics.
AB - In a number of widely studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spinlike degree of freedom at the degenerate conduction band minima, also known as "valleys." External symmetry-breaking fields such as mechanical strain, or electric or magnetic fields, can tune the valley polarization of these materials, making them suitable candidates for "valleytronics." Here we study a quantum well of AlAs, where the two-dimensional electrons reside in two energetically degenerate valleys. By fabricating a strain-inducing grating on the sample surface, we engineer a spatial modulation of the electron population in different valleys, i.e., a "valley superlattice" in the quantum well plane. Our results establish a novel manipulation technique of the valley degree of freedom, paving the way to realizing a valley-selective layered structure in multivalley materials, with potential application in valleytronics.
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U2 - 10.1103/PhysRevLett.121.036802
DO - 10.1103/PhysRevLett.121.036802
M3 - Article
C2 - 30085799
AN - SCOPUS:85050408098
SN - 0031-9007
VL - 121
JO - Physical review letters
JF - Physical review letters
IS - 3
M1 - 036802
ER -