Realization of a quasi-three-dimensional modulation-doped semiconductor structure

M. Shayegan; T. Sajoto; M. Santos; C. Silvestre

doi:10.1063/1.99834

Realization of a quasi-three-dimensional modulation-doped semiconductor structure

M. Shayegan, T. Sajoto, M. Santos, C. Silvestre

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Abstract

We report the realization of a modulation-doped quasi-three-dimensional electron system. The structure consists of a 2000-Å-wide undoped Al _xGa_1-xAs well bounded by undoped (spacer) and doped layers of Al_yGa_1-yAs (y>x) on both sides. The alloy composition in the well (x) is varied quadratically so that the combined potentials due to the Al_xGa_1-xAs and the electric charge in the well produce a square potential well with a nearly uniform carrier density. Magnetotransport data reveal that the system contains ≅2.5×10¹¹ cm^-2 electrons, which occupy four electric subbands and have a low-temperature mobility in excess of 1×10⁵ cm²/V s indicating the high quality of the structure.

Original language	English (US)
Pages (from-to)	791-793
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	9
DOIs	https://doi.org/10.1063/1.99834
State	Published - 1988

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.99834

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title = "Realization of a quasi-three-dimensional modulation-doped semiconductor structure",

abstract = "We report the realization of a modulation-doped quasi-three-dimensional electron system. The structure consists of a 2000-{\AA}-wide undoped Al xGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs (y>x) on both sides. The alloy composition in the well (x) is varied quadratically so that the combined potentials due to the AlxGa1-xAs and the electric charge in the well produce a square potential well with a nearly uniform carrier density. Magnetotransport data reveal that the system contains ≅2.5×1011 cm-2 electrons, which occupy four electric subbands and have a low-temperature mobility in excess of 1×105 cm2/V s indicating the high quality of the structure.",

author = "M. Shayegan and T. Sajoto and M. Santos and C. Silvestre",

year = "1988",

doi = "10.1063/1.99834",

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T1 - Realization of a quasi-three-dimensional modulation-doped semiconductor structure

AU - Shayegan, M.

AU - Sajoto, T.

AU - Santos, M.

AU - Silvestre, C.

PY - 1988

Y1 - 1988

N2 - We report the realization of a modulation-doped quasi-three-dimensional electron system. The structure consists of a 2000-Å-wide undoped Al xGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs (y>x) on both sides. The alloy composition in the well (x) is varied quadratically so that the combined potentials due to the AlxGa1-xAs and the electric charge in the well produce a square potential well with a nearly uniform carrier density. Magnetotransport data reveal that the system contains ≅2.5×1011 cm-2 electrons, which occupy four electric subbands and have a low-temperature mobility in excess of 1×105 cm2/V s indicating the high quality of the structure.

AB - We report the realization of a modulation-doped quasi-three-dimensional electron system. The structure consists of a 2000-Å-wide undoped Al xGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs (y>x) on both sides. The alloy composition in the well (x) is varied quadratically so that the combined potentials due to the AlxGa1-xAs and the electric charge in the well produce a square potential well with a nearly uniform carrier density. Magnetotransport data reveal that the system contains ≅2.5×1011 cm-2 electrons, which occupy four electric subbands and have a low-temperature mobility in excess of 1×105 cm2/V s indicating the high quality of the structure.

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Realization of a quasi-three-dimensional modulation-doped semiconductor structure

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