Realization of a quasi-three-dimensional modulation-doped semiconductor structure

M. Shayegan, T. Sajoto, M. Santos, C. Silvestre

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122 Scopus citations


We report the realization of a modulation-doped quasi-three-dimensional electron system. The structure consists of a 2000-Å-wide undoped Al xGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs (y>x) on both sides. The alloy composition in the well (x) is varied quadratically so that the combined potentials due to the AlxGa1-xAs and the electric charge in the well produce a square potential well with a nearly uniform carrier density. Magnetotransport data reveal that the system contains ≅2.5×1011 cm-2 electrons, which occupy four electric subbands and have a low-temperature mobility in excess of 1×105 cm2/V s indicating the high quality of the structure.

Original languageEnglish (US)
Pages (from-to)791-793
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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