Real-time TEM imaging of the formation of crystalline nanoscale gaps

Douglas R. Strachan; Danvers E. Johnston; Beth S. Guiton; Sujit S. Datta; Peter K. Davies; Dawn A. Bonnell; A. T.Charlie Johnson

doi:10.1103/PhysRevLett.100.056805

Real-time TEM imaging of the formation of crystalline nanoscale gaps

Douglas R. Strachan, Danvers E. Johnston, Beth S. Guiton, Sujit S. Datta, Peter K. Davies, Dawn A. Bonnell, A. T.Charlie Johnson

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

We present real-time transmission electron microscopy of nanogap formation by feedback controlled electromigration that reveals a remarkable degree of crystalline order. Crystal facets appear during feedback controlled electromigration indicating a layer-by-layer, highly reproducible electromigration process avoiding thermal runaway and melting. These measurements provide insight into the electromigration induced failure mechanism in sub-20 nm size interconnects, indicating that the current density at failure increases as the width decreases to approximately 1 nm.

Original language	English (US)
Article number	056805
Journal	Physical review letters
Volume	100
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.100.056805
State	Published - Feb 7 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1103/PhysRevLett.100.056805

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author = "Strachan, {Douglas R.} and Johnston, {Danvers E.} and Guiton, {Beth S.} and Datta, {Sujit S.} and Davies, {Peter K.} and Bonnell, {Dawn A.} and Johnson, {A. T.Charlie}",

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AU - Johnston, Danvers E.

AU - Guiton, Beth S.

AU - Datta, Sujit S.

AU - Davies, Peter K.

AU - Bonnell, Dawn A.

AU - Johnson, A. T.Charlie

PY - 2008/2/7

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AB - We present real-time transmission electron microscopy of nanogap formation by feedback controlled electromigration that reveals a remarkable degree of crystalline order. Crystal facets appear during feedback controlled electromigration indicating a layer-by-layer, highly reproducible electromigration process avoiding thermal runaway and melting. These measurements provide insight into the electromigration induced failure mechanism in sub-20 nm size interconnects, indicating that the current density at failure increases as the width decreases to approximately 1 nm.

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Real-time TEM imaging of the formation of crystalline nanoscale gaps

Abstract

All Science Journal Classification (ASJC) codes

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