Real-time electron counting in semiconductor nanostructures

A. J. Rimberg; M. Thalakulam; W. Lu; Z. Ji; L. N. Pfeiffer; K. W. West

doi:10.1117/12.603651

Real-time electron counting in semiconductor nanostructures

A. J. Rimberg, M. Thalakulam, W. Lu, Z. Ji, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Conference article › peer-review

Abstract

By coupling a radio-frequency single-electron transistor (RF-SET) to a quantum dot (QD) in a GaAs/AlGaAs heterostructure, we have succeeded in detecting the tunneling of individual electrons on and off the QD on time scales as short as one microsecond. Using charge detection to probe the state of the QD allows us to nearly isolate the dot from its leads, thereby minimizing decoherence-inducing effects of the environment. We have extended these charge detection techniques to double quantum dots (DQDs) that can simultaneously be used to characterize the backaction of the RF-SET. The combined RF-SET/DQD system is well-suited to the development of charge- or spin-based quantum bits, and to investigation of the quantum measurement problem.

Original language	English (US)
Article number	29
Pages (from-to)	254-262
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5790
DOIs	https://doi.org/10.1117/12.603651
State	Published - 2005
Externally published	Yes
Event	Terahertz for Military and Security Applications III - Orlando, FL, United States Duration: Mar 28 2005 → Mar 29 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Backaction
Quantum dot
Radio frequency
Single-electron transistor

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10.1117/12.603651

Cite this

@article{c82484cb079147a5adcdd52450ac1457,

title = "Real-time electron counting in semiconductor nanostructures",

abstract = "By coupling a radio-frequency single-electron transistor (RF-SET) to a quantum dot (QD) in a GaAs/AlGaAs heterostructure, we have succeeded in detecting the tunneling of individual electrons on and off the QD on time scales as short as one microsecond. Using charge detection to probe the state of the QD allows us to nearly isolate the dot from its leads, thereby minimizing decoherence-inducing effects of the environment. We have extended these charge detection techniques to double quantum dots (DQDs) that can simultaneously be used to characterize the backaction of the RF-SET. The combined RF-SET/DQD system is well-suited to the development of charge- or spin-based quantum bits, and to investigation of the quantum measurement problem.",

keywords = "Backaction, Quantum dot, Radio frequency, Single-electron transistor",

author = "Rimberg, {A. J.} and M. Thalakulam and W. Lu and Z. Ji and Pfeiffer, {L. N.} and West, {K. W.}",

year = "2005",

doi = "10.1117/12.603651",

language = "English (US)",

volume = "5790",

pages = "254--262",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Terahertz for Military and Security Applications III ; Conference date: 28-03-2005 Through 29-03-2005",

}

TY - JOUR

T1 - Real-time electron counting in semiconductor nanostructures

AU - Rimberg, A. J.

AU - Thalakulam, M.

AU - Lu, W.

AU - Ji, Z.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 2005

Y1 - 2005

N2 - By coupling a radio-frequency single-electron transistor (RF-SET) to a quantum dot (QD) in a GaAs/AlGaAs heterostructure, we have succeeded in detecting the tunneling of individual electrons on and off the QD on time scales as short as one microsecond. Using charge detection to probe the state of the QD allows us to nearly isolate the dot from its leads, thereby minimizing decoherence-inducing effects of the environment. We have extended these charge detection techniques to double quantum dots (DQDs) that can simultaneously be used to characterize the backaction of the RF-SET. The combined RF-SET/DQD system is well-suited to the development of charge- or spin-based quantum bits, and to investigation of the quantum measurement problem.

AB - By coupling a radio-frequency single-electron transistor (RF-SET) to a quantum dot (QD) in a GaAs/AlGaAs heterostructure, we have succeeded in detecting the tunneling of individual electrons on and off the QD on time scales as short as one microsecond. Using charge detection to probe the state of the QD allows us to nearly isolate the dot from its leads, thereby minimizing decoherence-inducing effects of the environment. We have extended these charge detection techniques to double quantum dots (DQDs) that can simultaneously be used to characterize the backaction of the RF-SET. The combined RF-SET/DQD system is well-suited to the development of charge- or spin-based quantum bits, and to investigation of the quantum measurement problem.

KW - Backaction

KW - Quantum dot

KW - Radio frequency

KW - Single-electron transistor

UR - http://www.scopus.com/inward/record.url?scp=26844447937&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=26844447937&partnerID=8YFLogxK

U2 - 10.1117/12.603651

DO - 10.1117/12.603651

M3 - Conference article

AN - SCOPUS:26844447937

SN - 0277-786X

VL - 5790

SP - 254

EP - 262

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 29

T2 - Terahertz for Military and Security Applications III

Y2 - 28 March 2005 through 29 March 2005

ER -

Real-time electron counting in semiconductor nanostructures

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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