Reactivity of MgB2 with common substrate and electronic materials

T. He, R. J. Cava, John M. Rowell

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 and 800°C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia, MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600°C, MgB2 reacted only with SiO2 and Si. At 800°C, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The Tc of MgB2 decreased in the reactions with SiC and Al2O3.

Original languageEnglish (US)
Pages (from-to)291-293
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number2
DOIs
StatePublished - Jan 14 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Reactivity of MgB<sub>2</sub> with common substrate and electronic materials'. Together they form a unique fingerprint.

Cite this