Reactivity of MgB2 with common substrate and electronic materials

T. He; R. J. Cava; John M. Rowell

doi:10.1063/1.1433915

Reactivity of MgB₂ with common substrate and electronic materials

T. He, R. J. Cava, John M. Rowell

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Abstract

The reactivity of MgB₂ with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 and 800°C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO₂, yttria stabilized zirconia, MgO, Al₂O₃, SiO₂, SrTiO₃, TiN, TaN, AlN, Si, and SiC. At 600°C, MgB₂ reacted only with SiO₂ and Si. At 800°C, however, reactions were observed for MgB₂ with Al₂O₃, SiO₂, Si, SiC, and SrTiO₃. The T_c of MgB₂ decreased in the reactions with SiC and Al₂O₃.

Original language	English (US)
Pages (from-to)	291-293
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	2
DOIs	https://doi.org/10.1063/1.1433915
State	Published - Jan 14 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Reactivity of MgB2 with common substrate and electronic materials",

abstract = "The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 and 800°C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia, MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600°C, MgB2 reacted only with SiO2 and Si. At 800°C, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The Tc of MgB2 decreased in the reactions with SiC and Al2O3.",

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T1 - Reactivity of MgB2 with common substrate and electronic materials

AU - He, T.

AU - Cava, R. J.

AU - Rowell, John M.

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N2 - The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 and 800°C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia, MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600°C, MgB2 reacted only with SiO2 and Si. At 800°C, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The Tc of MgB2 decreased in the reactions with SiC and Al2O3.

AB - The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 and 800°C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia, MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600°C, MgB2 reacted only with SiO2 and Si. At 800°C, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The Tc of MgB2 decreased in the reactions with SiC and Al2O3.

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Reactivity of MgB₂ with common substrate and electronic materials

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