The reactivity of MgB2 with powdered forms of common substrate and electronic materials is reported. Reaction temperatures between 600 and 800°C, encompassing the range commonly employed in thin-film fabrication, were studied. The materials tested for reactivity were ZrO2, yttria stabilized zirconia, MgO, Al2O3, SiO2, SrTiO3, TiN, TaN, AlN, Si, and SiC. At 600°C, MgB2 reacted only with SiO2 and Si. At 800°C, however, reactions were observed for MgB2 with Al2O3, SiO2, Si, SiC, and SrTiO3. The Tc of MgB2 decreased in the reactions with SiC and Al2O3.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Jan 14 2002|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)