Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

Loren Pfeiffer; Julia M. Phillips; K. E. Luther; K. W. West; J. L. Batstone; F. A. Stevie; J. E.A. Maurits

doi:10.1063/1.98175

Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

Loren Pfeiffer
, Julia M. Phillips
, K. E. Luther
, K. W. West
, J. L. Batstone
, F. A. Stevie
, J. E.A. Maurits

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The heteroepitaxial quality of (100) Si films on (11̄02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.

Original language	English (US)
Pages (from-to)	466-468
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	8
DOIs	https://doi.org/10.1063/1.98175
State	Published - 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.98175

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@article{a3826922fd6b48b299e51162a028e420,

title = "Rapid thermal processing to improve the epitaxy of (100) silicon on (1{\=1}02) sapphire",

abstract = "The heteroepitaxial quality of (100) Si films on (1{\=1}02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-{\AA} (100) SOS film the (100) aligned to random RBS yield improves from 10\% and 54\% at the front and back interfaces, to as low as 3.2\% and 13\% after the RTA. The microtwin volume shows a corresponding decrease to under 1\% from the as-grown value of 2.7\%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.",

author = "Loren Pfeiffer and Phillips, \{Julia M.\} and Luther, \{K. E.\} and West, \{K. W.\} and Batstone, \{J. L.\} and Stevie, \{F. A.\} and Maurits, \{J. E.A.\}",

year = "1987",

doi = "10.1063/1.98175",

language = "English (US)",

volume = "50",

pages = "466--468",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

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TY - JOUR

T1 - Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

AU - Pfeiffer, Loren

AU - Phillips, Julia M.

AU - Luther, K. E.

AU - West, K. W.

AU - Batstone, J. L.

AU - Stevie, F. A.

AU - Maurits, J. E.A.

PY - 1987

Y1 - 1987

N2 - The heteroepitaxial quality of (100) Si films on (11̄02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.

AB - The heteroepitaxial quality of (100) Si films on (11̄02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.

UR - https://www.scopus.com/pages/publications/0000536353

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U2 - 10.1063/1.98175

DO - 10.1063/1.98175

M3 - Article

AN - SCOPUS:0000536353

SN - 0003-6951

VL - 50

SP - 466

EP - 468

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

Abstract

All Science Journal Classification (ASJC) codes

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