Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

Loren Pfeiffer; Julia M. Phillips; K. E. Luther; K. W. West; J. L. Batstone; F. A. Stevie; J. E.A. Maurits

doi:10.1063/1.98175

Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

Loren Pfeiffer, Julia M. Phillips, K. E. Luther, K. W. West, J. L. Batstone, F. A. Stevie, J. E.A. Maurits

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The heteroepitaxial quality of (100) Si films on (11̄02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.

Original language	English (US)
Pages (from-to)	466-468
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	8
DOIs	https://doi.org/10.1063/1.98175
State	Published - 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.98175

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title = "Rapid thermal processing to improve the epitaxy of (100) silicon on (1{\=1}02) sapphire",

abstract = "The heteroepitaxial quality of (100) Si films on (1{\=1}02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-{\AA} (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.",

author = "Loren Pfeiffer and Phillips, {Julia M.} and Luther, {K. E.} and West, {K. W.} and Batstone, {J. L.} and Stevie, {F. A.} and Maurits, {J. E.A.}",

year = "1987",

doi = "10.1063/1.98175",

language = "English (US)",

volume = "50",

pages = "466--468",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

AU - Pfeiffer, Loren

AU - Phillips, Julia M.

AU - Luther, K. E.

AU - West, K. W.

AU - Batstone, J. L.

AU - Stevie, F. A.

AU - Maurits, J. E.A.

PY - 1987

Y1 - 1987

N2 - The heteroepitaxial quality of (100) Si films on (11̄02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.

AB - The heteroepitaxial quality of (100) Si films on (11̄02) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350°C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.

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JO - Applied Physics Letters

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ER -

Rapid thermal processing to improve the epitaxy of (100) silicon on (11̄02) sapphire

Abstract

All Science Journal Classification (ASJC) codes

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