Rapid annealing of silicon with a scanning cw Hg lamp

T. J. Stultz; J. Sturm; J. F. Gibbons; S. K. Ichiki

doi:10.1063/1.330022

Rapid annealing of silicon with a scanning cw Hg lamp

T. J. Stultz, J. Sturm, J. F. Gibbons, S. K. Ichiki

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A scanning arc lamp annealing system has been built using a 3-in.-long mercury arc lamp with an elliptical reflector. The reflector focuses the light into a high intensity narrow line source. Silicon wafers implanted with 100-KeV ⁷⁵As⁺ to 1×10¹⁵ cm^-2 have been uniformly annealed with a single scan, resulting in complete activation and negligible redistribution of the implanted species. Using a scan rate of 1 cm/s, entire 3-in. wafers have been annealed in less than 10 sec with this system.

Original language	English (US)
Pages (from-to)	7109-7111
Number of pages	3
Journal	Journal of Applied Physics
Volume	53
Issue number	10
DOIs	https://doi.org/10.1063/1.330022
State	Published - 1982
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.330022

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title = "Rapid annealing of silicon with a scanning cw Hg lamp",

abstract = "A scanning arc lamp annealing system has been built using a 3-in.-long mercury arc lamp with an elliptical reflector. The reflector focuses the light into a high intensity narrow line source. Silicon wafers implanted with 100-KeV 75As+ to 1×1015 cm-2 have been uniformly annealed with a single scan, resulting in complete activation and negligible redistribution of the implanted species. Using a scan rate of 1 cm/s, entire 3-in. wafers have been annealed in less than 10 sec with this system.",

author = "Stultz, \{T. J.\} and J. Sturm and Gibbons, \{J. F.\} and Ichiki, \{S. K.\}",

year = "1982",

doi = "10.1063/1.330022",

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pages = "7109--7111",

journal = "Journal of Applied Physics",

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T1 - Rapid annealing of silicon with a scanning cw Hg lamp

AU - Stultz, T. J.

AU - Sturm, J.

AU - Gibbons, J. F.

AU - Ichiki, S. K.

PY - 1982

Y1 - 1982

N2 - A scanning arc lamp annealing system has been built using a 3-in.-long mercury arc lamp with an elliptical reflector. The reflector focuses the light into a high intensity narrow line source. Silicon wafers implanted with 100-KeV 75As+ to 1×1015 cm-2 have been uniformly annealed with a single scan, resulting in complete activation and negligible redistribution of the implanted species. Using a scan rate of 1 cm/s, entire 3-in. wafers have been annealed in less than 10 sec with this system.

AB - A scanning arc lamp annealing system has been built using a 3-in.-long mercury arc lamp with an elliptical reflector. The reflector focuses the light into a high intensity narrow line source. Silicon wafers implanted with 100-KeV 75As+ to 1×1015 cm-2 have been uniformly annealed with a single scan, resulting in complete activation and negligible redistribution of the implanted species. Using a scan rate of 1 cm/s, entire 3-in. wafers have been annealed in less than 10 sec with this system.

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EP - 7111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Rapid annealing of silicon with a scanning cw Hg lamp

Abstract

All Science Journal Classification (ASJC) codes

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