Rapid annealing of silicon with a scanning cw Hg lamp

T. J. Stultz, James Christopher Sturm, J. F. Gibbons, S. K. Ichiki

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A scanning arc lamp annealing system has been built using a 3-in.-long mercury arc lamp with an elliptical reflector. The reflector focuses the light into a high intensity narrow line source. Silicon wafers implanted with 100-KeV 75As+ to 1×1015 cm-2 have been uniformly annealed with a single scan, resulting in complete activation and negligible redistribution of the implanted species. Using a scan rate of 1 cm/s, entire 3-in. wafers have been annealed in less than 10 sec with this system.

Original languageEnglish (US)
Pages (from-to)7109-7111
Number of pages3
JournalJournal of Applied Physics
Volume53
Issue number10
DOIs
StatePublished - Dec 1 1982
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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