Rapid and minimally invasive quantum cascade wafer testing

Ekua N. Bentil; Fatima Toor; Anthony J. Hoffman; Matthew D. Escarra; Claire F. Gmachl

doi:10.1117/12.810258

Rapid and minimally invasive quantum cascade wafer testing

Ekua N. Bentil, Fatima Toor, Anthony J. Hoffman, Matthew D. Escarra, Claire F. Gmachl

Research output: Contribution to journal › Conference article › peer-review

Abstract

Quantum Cascade (QC) wafer quality testing requires intensive processing and characterization. Here, we demonstrate a minimally invasive technique that gives rapid feedback on wafer quality. A mesa is fabricated using only a single etch and metallization step. The device is electrically pumped and optically and electrically characterized. The peak wavelength position and the full width at half maximum (FWHM) as a function of applied electric field, turn-on voltage, maximum operating current density and threshold current density of the mesas are measured. Results of the mesa and lasers processed from the same wafer are compared and differed by less than 10%.

Original language	English (US)
Article number	72300T
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7230
DOIs	https://doi.org/10.1117/12.810258
State	Published - 2009
Event	Novel In-Plane Semiconductor Lasers VIII - San Jose, CA, United States Duration: Jan 26 2009 → Jan 29 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Intersubband
Mid-infrared
Quantum Cascade laser
Wafer quality

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10.1117/12.810258

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title = "Rapid and minimally invasive quantum cascade wafer testing",

abstract = "Quantum Cascade (QC) wafer quality testing requires intensive processing and characterization. Here, we demonstrate a minimally invasive technique that gives rapid feedback on wafer quality. A mesa is fabricated using only a single etch and metallization step. The device is electrically pumped and optically and electrically characterized. The peak wavelength position and the full width at half maximum (FWHM) as a function of applied electric field, turn-on voltage, maximum operating current density and threshold current density of the mesas are measured. Results of the mesa and lasers processed from the same wafer are compared and differed by less than 10%.",

keywords = "Intersubband, Mid-infrared, Quantum Cascade laser, Wafer quality",

author = "Bentil, {Ekua N.} and Fatima Toor and Hoffman, {Anthony J.} and Escarra, {Matthew D.} and Gmachl, {Claire F.}",

year = "2009",

doi = "10.1117/12.810258",

language = "English (US)",

volume = "7230",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Novel In-Plane Semiconductor Lasers VIII ; Conference date: 26-01-2009 Through 29-01-2009",

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TY - JOUR

T1 - Rapid and minimally invasive quantum cascade wafer testing

AU - Bentil, Ekua N.

AU - Toor, Fatima

AU - Hoffman, Anthony J.

AU - Escarra, Matthew D.

AU - Gmachl, Claire F.

PY - 2009

Y1 - 2009

N2 - Quantum Cascade (QC) wafer quality testing requires intensive processing and characterization. Here, we demonstrate a minimally invasive technique that gives rapid feedback on wafer quality. A mesa is fabricated using only a single etch and metallization step. The device is electrically pumped and optically and electrically characterized. The peak wavelength position and the full width at half maximum (FWHM) as a function of applied electric field, turn-on voltage, maximum operating current density and threshold current density of the mesas are measured. Results of the mesa and lasers processed from the same wafer are compared and differed by less than 10%.

AB - Quantum Cascade (QC) wafer quality testing requires intensive processing and characterization. Here, we demonstrate a minimally invasive technique that gives rapid feedback on wafer quality. A mesa is fabricated using only a single etch and metallization step. The device is electrically pumped and optically and electrically characterized. The peak wavelength position and the full width at half maximum (FWHM) as a function of applied electric field, turn-on voltage, maximum operating current density and threshold current density of the mesas are measured. Results of the mesa and lasers processed from the same wafer are compared and differed by less than 10%.

KW - Intersubband

KW - Mid-infrared

KW - Quantum Cascade laser

KW - Wafer quality

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U2 - 10.1117/12.810258

DO - 10.1117/12.810258

M3 - Conference article

AN - SCOPUS:63449118029

SN - 0277-786X

VL - 7230

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 72300T

T2 - Novel In-Plane Semiconductor Lasers VIII

Y2 - 26 January 2009 through 29 January 2009

ER -

Rapid and minimally invasive quantum cascade wafer testing

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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