S. S. Tsao, D. M. Fleetwood, H. T. Weaver, L. Pfeiffer, G. K. Celler

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Total dose radiation effects were measured for sidewall-hardened n-channel silicon-on-insulator (SOI)/MOS transistors, fabricated in zone-melt-recrystallized (ZMR) and oxygen-implanted (SIMOX) SOI materials. The radiation responses of transistors are compared with three types of sidewall or edge configurations: island transistors with passivated edges, island transistors without passivated edges, and edgeless (enclosed-gate) transistors. Data from these three test devices allow clear separation of front-, back-, and edge-channel conduction. Passivated edge channels were hard to **6**0Co doses in excess of 24 Mrad(Si). The overall hardness of the passivated-edge transistors is limited only by the radiation-induced threshold voltage shifts (about minus 1 V at 1. 0 Mrad) of the top channel. No significant differences in total-dose response of ZMR and SIMOX devices were observed under the radiation conditions used.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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