Radiation-Tolerant, sidewall-hardened soi/mos transistors

S. S. Tsao, D. M. Fleetwood, H. T. Weaver, L. Pfeiffer, G. K. Celler

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Total dose radiation effects were measured for sidewall-hardened n-channel SOI/MOS transistors, fabricated in zone-melt-recrystallized (ZMR) and oxygen-implanted (SIMOX) SOI materials. We compare the radiation responses of transistors with three types of sidewall or edge configurations: Island transistors with passivated edges, island transistors without passivated edges, and edgeless (enclosed-gate) transistors. Data from these three test devices allow clear separation of front-, back-, and edge-channel conduction. Passivated edge channels were hard to Co-60 doses in excess of 24 Mrad(Si). The overall hardness of the passivated-edge transistors is limited only by the radiation-induced threshold voltage shifts (about -1 V at 1.0 Mrad) of the top channel. No significant differences in total-dose response of ZMR and SIMOX devices were observed under the radiation conditions employed.

Original languageEnglish (US)
Pages (from-to)1686-1691
Number of pages6
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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