TY - JOUR
T1 - Radiation hardness of VA1 with submicron process technology
AU - Yokoyama, M.
AU - Aihara, H.
AU - Hazumi, M.
AU - Ishino, H.
AU - Kaneko, J.
AU - Li, Y.
AU - Marlow, D.
AU - Mikkelsen, S.
AU - Nygård, E.
AU - Tajima, H.
AU - Talebi, J.
AU - Varner, G.
AU - Yamamoto, H.
N1 - Funding Information:
Manuscript received November 5, 2000; revised January 31, 2001 and March 13, 2001. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Areas (Physics of CP violation) from the Ministry of Education, Science, and Culture of Japan. M. Yokoyama, H. Aihara, and H. Tajima are with the Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan (e-mail: [email protected]). M. Hazumi is with the Department of Physics, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan. H. Ishino and J. Kaneko are with the Physics Department, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551, Japan. Y. Li, G. Varner, and H .Yamamoto are with the Physics Department, University of Hawaii, Honolulu, HI 96822 USA. D. Marlow is with the Physics Department, Princeton University, Princeton, NJ 08544 USA. S. Mikkelsen, E. Nygård, and J. Talebi are with Integrated Detector and Electronics AS, N-1323 Høvik, Norway. Publisher Item Identifier S 0018-9499(01)04917-6.
PY - 2001/6
Y1 - 2001/6
N2 - We have studied the radiation hardness of the VA1, a Viking-architecture preamplifier VLSI chip. Large-scale integrated (LSI) samples are fabricated in 0.8 and 0.35 μm process technologies to improve the radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8-μm technology compared to 1.2-μm technology. Little degradation of noise and gain is observed up to a total dose of 20 Mrd for the VA1 fabricated in the 0.35-μm technology. We find that the radiation hardness improves with a scaling of better than tox-6 (tox: oxide thickness). Basic parameters of MOSFETs are also studied to understand the mechanism of radiation damage in the VA1.
AB - We have studied the radiation hardness of the VA1, a Viking-architecture preamplifier VLSI chip. Large-scale integrated (LSI) samples are fabricated in 0.8 and 0.35 μm process technologies to improve the radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8-μm technology compared to 1.2-μm technology. Little degradation of noise and gain is observed up to a total dose of 20 Mrd for the VA1 fabricated in the 0.35-μm technology. We find that the radiation hardness improves with a scaling of better than tox-6 (tox: oxide thickness). Basic parameters of MOSFETs are also studied to understand the mechanism of radiation damage in the VA1.
KW - Integrated circuit radiation effects
KW - MOS analog integrated circuits
KW - Radiation detector circuits
KW - Radiation hardening
KW - Silicon radiation detectors
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U2 - 10.1109/23.940096
DO - 10.1109/23.940096
M3 - Conference article
AN - SCOPUS:17944374241
SN - 0018-9499
VL - 48
SP - 440
EP - 443
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 3 I
T2 - 2000 Nuclear Science Symphosium (NSS)
Y2 - 15 October 2000 through 20 October 2000
ER -