Radiation-hardness of VA1 with sub-micron process technology

M. Yokoyama; H. Aihara; M. Hazumi; H. Ishino; J. Kaneko; Y. Li; D. Marlow; S. Mikkelsen; E. Nygård; H. Tajima; J. Talebi; G. Varner; H. Yamamoto

Radiation-hardness of VA1 with sub-micron process technology

M. Yokoyama, H. Aihara, M. Hazumi, H. Ishino, J. Kaneko, Y. Li, D. Marlow, S. Mikkelsen, E. Nygård, H. Tajima, J. Talebi, G. Varner, H. Yamamoto

Research output: Contribution to conference › Paper › peer-review

Abstract

We have studied the radiation hardness of the VA1. a Viking-architecture preamplifier VLSI chip. LSI samples are fabricated by 0.8 μm and 0.35 μm process technology to improve radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8 μm technology. Little degradation of noise and gain is observed to total dose of 20 MRad .for the VA1 fabricated by the 0.35 μm technology. We find that the radiation hardness improves at a scaling of better than t_ox^-6 (t_ox: oxide thickness). Basic parameters of MOS FETs are also studied to understand a mechanism of the radiation damage in the VA1.

Original language	English (US)
Pages	9/19-9/23
State	Published - 2000
Event	2000 IEEE Nuclear Science Symposium Conference Record - Lyon, France Duration: Oct 15 2000 → Oct 20 2000

Other

Other	2000 IEEE Nuclear Science Symposium Conference Record
Country/Territory	France
City	Lyon
Period	10/15/00 → 10/20/00

All Science Journal Classification (ASJC) codes

Radiation
Nuclear and High Energy Physics
Radiology Nuclear Medicine and imaging

Cite this

@conference{c3da168c5f52498c8fbfc3505ef94fb9,

title = "Radiation-hardness of VA1 with sub-micron process technology",

abstract = "We have studied the radiation hardness of the VA1. a Viking-architecture preamplifier VLSI chip. LSI samples are fabricated by 0.8 μm and 0.35 μm process technology to improve radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8 μm technology. Little degradation of noise and gain is observed to total dose of 20 MRad .for the VA1 fabricated by the 0.35 μm technology. We find that the radiation hardness improves at a scaling of better than tox-6 (tox: oxide thickness). Basic parameters of MOS FETs are also studied to understand a mechanism of the radiation damage in the VA1.",

author = "M. Yokoyama and H. Aihara and M. Hazumi and H. Ishino and J. Kaneko and Y. Li and D. Marlow and S. Mikkelsen and E. Nyg{\aa}rd and H. Tajima and J. Talebi and G. Varner and H. Yamamoto",

year = "2000",

language = "English (US)",

pages = "9/19--9/23",

note = "2000 IEEE Nuclear Science Symposium Conference Record ; Conference date: 15-10-2000 Through 20-10-2000",

}

TY - CONF

T1 - Radiation-hardness of VA1 with sub-micron process technology

AU - Yokoyama, M.

AU - Aihara, H.

AU - Hazumi, M.

AU - Ishino, H.

AU - Kaneko, J.

AU - Li, Y.

AU - Marlow, D.

AU - Mikkelsen, S.

AU - Nygård, E.

AU - Tajima, H.

AU - Talebi, J.

AU - Varner, G.

AU - Yamamoto, H.

PY - 2000

Y1 - 2000

N2 - We have studied the radiation hardness of the VA1. a Viking-architecture preamplifier VLSI chip. LSI samples are fabricated by 0.8 μm and 0.35 μm process technology to improve radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8 μm technology. Little degradation of noise and gain is observed to total dose of 20 MRad .for the VA1 fabricated by the 0.35 μm technology. We find that the radiation hardness improves at a scaling of better than tox-6 (tox: oxide thickness). Basic parameters of MOS FETs are also studied to understand a mechanism of the radiation damage in the VA1.

AB - We have studied the radiation hardness of the VA1. a Viking-architecture preamplifier VLSI chip. LSI samples are fabricated by 0.8 μm and 0.35 μm process technology to improve radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8 μm technology. Little degradation of noise and gain is observed to total dose of 20 MRad .for the VA1 fabricated by the 0.35 μm technology. We find that the radiation hardness improves at a scaling of better than tox-6 (tox: oxide thickness). Basic parameters of MOS FETs are also studied to understand a mechanism of the radiation damage in the VA1.

UR - http://www.scopus.com/inward/record.url?scp=0034593519&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034593519&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034593519

SP - 9/19-9/23

T2 - 2000 IEEE Nuclear Science Symposium Conference Record

Y2 - 15 October 2000 through 20 October 2000

ER -

Radiation-hardness of VA1 with sub-micron process technology

Abstract

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this