Radiation damage studies for the BaBar Silicon Vertex Tracker

V. Re; D. Kirkby; M. Bruinsma; J. Berryhill; S. Burke; D. Callahan; C. Campagnari; B. Dahmes; D. Hale; P. Hart; S. Kyre; S. Levy; O. Long; M. Mazur; J. Richman; J. Stoner; W. Verkerke; J. Beringer; T. Beck; A. M. Eisner; M. Grothe; W. S. Lockman; T. Pulliam; A. Seiden; P. Spradlin; W. Walkowiak; M. Wilson; C. Borean; C. Bozzi; L. Piemontese; A. B. Breon; D. Brown; E. Charles; A. R. Clark; S. Dardin; F. Goozen; L. T. Kerth; A. Gritsan; G. Lynch; A. Perazzo; N. A. Roe; G. Zizka; V. Lillard; D. Roberts; E. Brenna; M. Citterio; F. Lanni; F. Palombo; L. Ratti; P. F. Manfredi; E. Mandelli; G. Batignani; S. Bettarini; M. Bondioli; F. Bucci; G. Calderini; M. Carpinelli; F. Forti; M. A. Giorgi; A. Lusiani; G. Marchiori; M. Morganti; F. Morsani; N. Neri; E. Paoloni; A. Profeti; M. Rama; G. Rizzo; F. Sandrelli; G. Simi; J. Walsh; P. Elmer; P. Burchat; C. Cheng; A. J. Edwards; T. I. Meyer; B. A. Petersen; C. Roat; M. Bona; F. Bianchi; D. Gamba; L. Bosisio; G. Delia Ricca; S. Dittongo; L. Lanceri; I. Rashevskaia; L. Vitale; G. Vuagnin; M. Datta; R. Liu; A. Mihalyi

doi:10.1016/j.nima.2005.04.017

Radiation damage studies for the BaBar Silicon Vertex Tracker

V. Re, D. Kirkby, M. Bruinsma, J. Berryhill, S. Burke, D. Callahan, C. Campagnari, B. Dahmes, D. Hale, P. Hart, S. Kyre, S. Levy, O. Long, M. Mazur, J. Richman, J. Stoner, W. Verkerke, J. Beringer, T. Beck, A. M. EisnerM. Grothe, W. S. Lockman, T. Pulliam, A. Seiden, P. Spradlin, W. Walkowiak, M. Wilson, C. Borean, C. Bozzi, L. Piemontese, A. B. Breon, D. Brown, E. Charles, A. R. Clark, S. Dardin, F. Goozen, L. T. Kerth, A. Gritsan, G. Lynch, A. Perazzo, N. A. Roe, G. Zizka, V. Lillard, D. Roberts, E. Brenna, M. Citterio, F. Lanni, F. Palombo, L. Ratti, P. F. Manfredi, E. Mandelli, G. Batignani, S. Bettarini, M. Bondioli, F. Bucci, G. Calderini, M. Carpinelli, F. Forti, M. A. Giorgi, A. Lusiani, G. Marchiori, M. Morganti, F. Morsani, N. Neri, E. Paoloni, A. Profeti, M. Rama, G. Rizzo, F. Sandrelli, G. Simi, J. Walsh, P. Elmer, P. Burchat, C. Cheng, A. J. Edwards, T. I. Meyer, B. A. Petersen, C. Roat, M. Bona, F. Bianchi, D. Gamba, L. Bosisio, G. Delia Ricca, S. Dittongo, L. Lanceri, I. Rashevskaia, L. Vitale, G. Vuagnin, M. Datta, R. Liu, A. Mihalyi

Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The Silicon Vertex Tracker of the BaBar experiment is a five-layer, double-sided AC-coupled silicon microstrip detector operating on the PEP-II storage ring at the Stanford Linear Accelerator Center. After more than four years of running, the silicon sensors and the front-end electronics in the inner layer have absorbed radiation doses up to 2 Mrad. In this paper we present results from radiation hardness tests and discuss the implications of the absorbed radiation dose on the Silicon Vertex Tracker lifetime.

Original language	English (US)
Pages (from-to)	11-15
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	549
Issue number	1-3
DOIs	https://doi.org/10.1016/j.nima.2005.04.017
State	Published - Sep 1 2005
Event	VERTEX 2003 - Duration: Sep 14 2003 → Sep 19 2003

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

Keywords

Detector
Radiation
Vertex

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10.1016/j.nima.2005.04.017

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Re, V., Kirkby, D., Bruinsma, M., Berryhill, J., Burke, S., Callahan, D., Campagnari, C., Dahmes, B., Hale, D., Hart, P., Kyre, S., Levy, S., Long, O., Mazur, M., Richman, J., Stoner, J., Verkerke, W., Beringer, J., Beck, T., ... Mihalyi, A. (2005). Radiation damage studies for the BaBar Silicon Vertex Tracker. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 549(1-3), 11-15. https://doi.org/10.1016/j.nima.2005.04.017

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title = "Radiation damage studies for the BaBar Silicon Vertex Tracker",

abstract = "The Silicon Vertex Tracker of the BaBar experiment is a five-layer, double-sided AC-coupled silicon microstrip detector operating on the PEP-II storage ring at the Stanford Linear Accelerator Center. After more than four years of running, the silicon sensors and the front-end electronics in the inner layer have absorbed radiation doses up to 2 Mrad. In this paper we present results from radiation hardness tests and discuss the implications of the absorbed radiation dose on the Silicon Vertex Tracker lifetime.",

keywords = "Detector, Radiation, Vertex",

author = "V. Re and D. Kirkby and M. Bruinsma and J. Berryhill and S. Burke and D. Callahan and C. Campagnari and B. Dahmes and D. Hale and P. Hart and S. Kyre and S. Levy and O. Long and M. Mazur and J. Richman and J. Stoner and W. Verkerke and J. Beringer and T. Beck and Eisner, {A. M.} and M. Grothe and Lockman, {W. S.} and T. Pulliam and A. Seiden and P. Spradlin and W. Walkowiak and M. Wilson and C. Borean and C. Bozzi and L. Piemontese and Breon, {A. B.} and D. Brown and E. Charles and Clark, {A. R.} and S. Dardin and F. Goozen and Kerth, {L. T.} and A. Gritsan and G. Lynch and A. Perazzo and Roe, {N. A.} and G. Zizka and V. Lillard and D. Roberts and E. Brenna and M. Citterio and F. Lanni and F. Palombo and L. Ratti and Manfredi, {P. F.} and E. Mandelli and G. Batignani and S. Bettarini and M. Bondioli and F. Bucci and G. Calderini and M. Carpinelli and F. Forti and Giorgi, {M. A.} and A. Lusiani and G. Marchiori and M. Morganti and F. Morsani and N. Neri and E. Paoloni and A. Profeti and M. Rama and G. Rizzo and F. Sandrelli and G. Simi and J. Walsh and P. Elmer and P. Burchat and C. Cheng and Edwards, {A. J.} and Meyer, {T. I.} and Petersen, {B. A.} and C. Roat and M. Bona and F. Bianchi and D. Gamba and L. Bosisio and {Delia Ricca}, G. and S. Dittongo and L. Lanceri and I. Rashevskaia and L. Vitale and G. Vuagnin and M. Datta and R. Liu and A. Mihalyi",

year = "2005",

month = sep,

day = "1",

doi = "10.1016/j.nima.2005.04.017",

language = "English (US)",

volume = "549",

pages = "11--15",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier",

number = "1-3",

note = "VERTEX 2003 ; Conference date: 14-09-2003 Through 19-09-2003",

}

Re, V, Kirkby, D, Bruinsma, M, Berryhill, J, Burke, S, Callahan, D, Campagnari, C, Dahmes, B, Hale, D, Hart, P, Kyre, S, Levy, S, Long, O, Mazur, M, Richman, J, Stoner, J, Verkerke, W, Beringer, J, Beck, T, Eisner, AM, Grothe, M, Lockman, WS, Pulliam, T, Seiden, A, Spradlin, P, Walkowiak, W, Wilson, M, Borean, C, Bozzi, C, Piemontese, L, Breon, AB, Brown, D, Charles, E, Clark, AR, Dardin, S, Goozen, F, Kerth, LT, Gritsan, A, Lynch, G, Perazzo, A, Roe, NA, Zizka, G, Lillard, V, Roberts, D, Brenna, E, Citterio, M, Lanni, F, Palombo, F, Ratti, L, Manfredi, PF, Mandelli, E, Batignani, G, Bettarini, S, Bondioli, M, Bucci, F, Calderini, G, Carpinelli, M, Forti, F, Giorgi, MA, Lusiani, A, Marchiori, G, Morganti, M, Morsani, F, Neri, N, Paoloni, E, Profeti, A, Rama, M, Rizzo, G, Sandrelli, F, Simi, G, Walsh, J, Elmer, P, Burchat, P, Cheng, C, Edwards, AJ, Meyer, TI, Petersen, BA, Roat, C, Bona, M, Bianchi, F, Gamba, D, Bosisio, L, Delia Ricca, G, Dittongo, S, Lanceri, L, Rashevskaia, I, Vitale, L, Vuagnin, G, Datta, M, Liu, R & Mihalyi, A 2005, 'Radiation damage studies for the BaBar Silicon Vertex Tracker', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 549, no. 1-3, pp. 11-15. https://doi.org/10.1016/j.nima.2005.04.017

TY - JOUR

T1 - Radiation damage studies for the BaBar Silicon Vertex Tracker

AU - Re, V.

AU - Kirkby, D.

AU - Bruinsma, M.

AU - Berryhill, J.

AU - Burke, S.

AU - Callahan, D.

AU - Campagnari, C.

AU - Dahmes, B.

AU - Hale, D.

AU - Hart, P.

AU - Kyre, S.

AU - Levy, S.

AU - Long, O.

AU - Mazur, M.

AU - Richman, J.

AU - Stoner, J.

AU - Verkerke, W.

AU - Beringer, J.

AU - Beck, T.

AU - Eisner, A. M.

AU - Grothe, M.

AU - Lockman, W. S.

AU - Pulliam, T.

AU - Seiden, A.

AU - Spradlin, P.

AU - Walkowiak, W.

AU - Wilson, M.

AU - Borean, C.

AU - Bozzi, C.

AU - Piemontese, L.

AU - Breon, A. B.

AU - Brown, D.

AU - Charles, E.

AU - Clark, A. R.

AU - Dardin, S.

AU - Goozen, F.

AU - Kerth, L. T.

AU - Gritsan, A.

AU - Lynch, G.

AU - Perazzo, A.

AU - Roe, N. A.

AU - Zizka, G.

AU - Lillard, V.

AU - Roberts, D.

AU - Brenna, E.

AU - Citterio, M.

AU - Lanni, F.

AU - Palombo, F.

AU - Ratti, L.

AU - Manfredi, P. F.

AU - Mandelli, E.

AU - Batignani, G.

AU - Bettarini, S.

AU - Bondioli, M.

AU - Bucci, F.

AU - Calderini, G.

AU - Carpinelli, M.

AU - Forti, F.

AU - Giorgi, M. A.

AU - Lusiani, A.

AU - Marchiori, G.

AU - Morganti, M.

AU - Morsani, F.

AU - Neri, N.

AU - Paoloni, E.

AU - Profeti, A.

AU - Rama, M.

AU - Rizzo, G.

AU - Sandrelli, F.

AU - Simi, G.

AU - Walsh, J.

AU - Elmer, P.

AU - Burchat, P.

AU - Cheng, C.

AU - Edwards, A. J.

AU - Meyer, T. I.

AU - Petersen, B. A.

AU - Roat, C.

AU - Bona, M.

AU - Bianchi, F.

AU - Gamba, D.

AU - Bosisio, L.

AU - Delia Ricca, G.

AU - Dittongo, S.

AU - Lanceri, L.

AU - Rashevskaia, I.

AU - Vitale, L.

AU - Vuagnin, G.

AU - Datta, M.

AU - Liu, R.

AU - Mihalyi, A.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - The Silicon Vertex Tracker of the BaBar experiment is a five-layer, double-sided AC-coupled silicon microstrip detector operating on the PEP-II storage ring at the Stanford Linear Accelerator Center. After more than four years of running, the silicon sensors and the front-end electronics in the inner layer have absorbed radiation doses up to 2 Mrad. In this paper we present results from radiation hardness tests and discuss the implications of the absorbed radiation dose on the Silicon Vertex Tracker lifetime.

AB - The Silicon Vertex Tracker of the BaBar experiment is a five-layer, double-sided AC-coupled silicon microstrip detector operating on the PEP-II storage ring at the Stanford Linear Accelerator Center. After more than four years of running, the silicon sensors and the front-end electronics in the inner layer have absorbed radiation doses up to 2 Mrad. In this paper we present results from radiation hardness tests and discuss the implications of the absorbed radiation dose on the Silicon Vertex Tracker lifetime.

KW - Detector

KW - Radiation

KW - Vertex

UR - http://www.scopus.com/inward/record.url?scp=31644449337&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31644449337&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2005.04.017

DO - 10.1016/j.nima.2005.04.017

M3 - Conference article

AN - SCOPUS:31644449337

SN - 0168-9002

VL - 549

SP - 11

EP - 15

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1-3

T2 - VERTEX 2003

Y2 - 14 September 2003 through 19 September 2003

ER -

Radiation damage studies for the BaBar Silicon Vertex Tracker

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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