Quasireversible magnetoresistance in exchange-spring tunnel junctions

M. Zhu; M. J. Wilson; P. Mitra; P. Schiffer; N. Samarth

doi:10.1103/PhysRevB.78.195307

Quasireversible magnetoresistance in exchange-spring tunnel junctions

M. Zhu, M. J. Wilson, P. Mitra, P. Schiffer, N. Samarth

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report a large, quasireversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (Ga1-x Mnx As) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased Ga1-x Mnx As layer. The distinctive tunneling anisotropic magnetoresistance of Ga1-x Mnx As produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.

Original language	English (US)
Article number	195307
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	78
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.78.195307
State	Published - Nov 10 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.78.195307

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abstract = "We report a large, quasireversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (Ga1-x Mnx As) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an {"}exchange spring{"}) within the biased Ga1-x Mnx As layer. The distinctive tunneling anisotropic magnetoresistance of Ga1-x Mnx As produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.",

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AU - Zhu, M.

AU - Wilson, M. J.

AU - Mitra, P.

AU - Schiffer, P.

AU - Samarth, N.

PY - 2008/11/10

Y1 - 2008/11/10

N2 - We report a large, quasireversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (Ga1-x Mnx As) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased Ga1-x Mnx As layer. The distinctive tunneling anisotropic magnetoresistance of Ga1-x Mnx As produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.

AB - We report a large, quasireversible tunnel magnetoresistance in exchange-biased ferromagnetic semiconductor tunnel junctions wherein a soft ferromagnetic semiconductor (Ga1-x Mnx As) is exchange coupled to a hard ferromagnetic metal (MnAs). Our observations are consistent with the formation of a region of inhomogeneous magnetization (an "exchange spring") within the biased Ga1-x Mnx As layer. The distinctive tunneling anisotropic magnetoresistance of Ga1-x Mnx As produces a pronounced sensitivity of the magnetoresistance to the state of the exchange spring.

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U2 - 10.1103/PhysRevB.78.195307

DO - 10.1103/PhysRevB.78.195307

M3 - Article

AN - SCOPUS:56349133906

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 19

M1 - 195307

ER -

Quasireversible magnetoresistance in exchange-spring tunnel junctions

Abstract

All Science Journal Classification (ASJC) codes

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