Quasiepitaxial growth of the organic molecular semiconductor 3,4,9,10-perylenetetracarboxylic dianhydride

Y. Hirose, S. R. Forrest, Antoine Kahn

Research output: Contribution to journalArticle

81 Scopus citations

Abstract

Thin films of the organic molecular semiconductor 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were grown by ultrahigh vacuum sublimation on graphite, and on As-saturated c(4×4), As-rich (2×4)-c(2×8), and Se-passivated (2×1) GaAs (100) surfaces. The Se-passivated GaAs and graphite surfaces resulted in PTCDA films with good crystallinity, whereas deposition under similar conditions on the (2×4)-c(2×8) GaAs surface produced films randomly oriented in the plane parallel to the surface. The films grown on the c(4×4) GaAs surface showed intermediate molecular ordering. These differences are analyzed in terms of interface bonding between the molecules and the substrate, specifically at defects and dangling bonds which pin the molecules at random sites. These interactions are considerably reduced on the inert surfaces of graphite and Se-passivated GaAs. The results presented here provide information on the conditions under which the quasiepitaxy of organic molecular crystals can be achieved on highly mismatched inorganic substrates.

Original languageEnglish (US)
Pages (from-to)14040-14047
Number of pages8
JournalPhysical Review B
Volume52
Issue number19
DOIs
StatePublished - Jan 1 1995

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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