Abstract
We report the fabrication, characterization, and physics of selectively-doped, wide parabolic AlGaAs wells which contain low-disorder, nearly uniform-density, dilute electron systems. The electron layer in these structures has a thickness of approx. 1000 angstrom and an effective three-dimensional density of approx. 1×1016cm-3. These structures provide a rather unique system for the studies of the single-electron as well as many-body effects in space-charge layers in semiconductors. Examples of new physical phenomena observed in these systems are presented; these include: (a) the observation of plasma-shifted cyclotron resonance, and (b) the collapse of the fractional quantum Hall effect in systems with large electron layer thickness. We also present the fabrication and magnetotransport measurements in a novel selectively-doped superlattice produced in a wide parabolic quantum well with a superimposed periodic potential.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 228-239 |
| Number of pages | 12 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1362 |
| Issue number | pt 1 |
| DOIs | |
| State | Published - 1991 |
| Event | Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Aachen, Ger Duration: Oct 28 1990 → Nov 2 1990 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering