Abstract
We have recently demonstrated the existence of a high mobility (6.1×105 cm2/V·s) two-dimensional electron gas (2DEG) at the (110) vicinal surface formed by cleaving [L. Pfeiffer et al., Appl. Phys. Letters 56 (1990) 1697] a (100) GaAs wafer. We have now expanded this work to modulation-doped overgrowth on the cleaved edge of a multiperiod superlattice. We report here the first observation of the quantum Hall characteristics in such a two-dimensional system containing an atomically precise 71 Å GaAs by 31 Å Al0.24Ga0.76As compositional superlattice. The onset of Shubnikov-De Haas oscillations occurs at only 3000 G, implying the Landau cyclotron orbits are phase coherent over diameters as large as 5000 Å, corresponding to more than 200 GaAs/AlGaAs interface crossings.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 333-338 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 111 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - May 2 1991 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry