Quantum wells with atomically smooth interfaces

Masahiro Yoshita; Hidefumi Akiyama; Loren N. Pfeiffer; Ken W. West

doi:10.1063/1.1490144

Quantum wells with atomically smooth interfaces

Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs heterointerfaces without atomic roughness. Microphotoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of microns in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation.

Original language	English (US)
Pages (from-to)	49-51
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	1
DOIs	https://doi.org/10.1063/1.1490144
State	Published - Jul 1 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1490144

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abstract = "By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs heterointerfaces without atomic roughness. Microphotoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of microns in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation.",

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AU - Pfeiffer, Loren N.

AU - West, Ken W.

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Y1 - 2002/7/1

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AB - By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs heterointerfaces without atomic roughness. Microphotoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of microns in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation.

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Quantum wells with atomically smooth interfaces

Abstract

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