Quantum transport response of topological hinge modes

Md Shafayat Hossain, Qi Zhang, Zhiwei Wang, Nikhil Dhale, Wenhao Liu, Maksim Litskevich, Brian Casas, Nana Shumiya, Jia Xin Yin, Tyler A. Cochran, Yongkai Li, Yu Xiao Jiang, Yuqi Zhang, Guangming Cheng, Zi Jia Cheng, Xian P. Yang, Nan Yao, Titus Neupert, Luis Balicas, Yugui YaoBing Lv, M. Zahid Hasan

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Electronic topological phases are typified by the conducting surface states that exist on the boundary of an insulating three-dimensional bulk. While the transport response of the two-dimensional surface states has been studied, the quantum response of the one-dimensional hinge modes has not been demonstrated. Here we provide evidence for quantum transport in gapless topological hinge states existing within the insulating bulk and surface energy gaps in the intrinsic topological insulator α-Bi4Br4. Our magnetoresistance measurements reveal pronounced Aharonov–Bohm oscillations that are periodic in h/e (where h denotes Planck’s constant and e is the electron charge). The observed periodicity evinces quantum interference of electrons circumnavigating around the hinges. We also demonstrate that the h/e oscillations evolve as a function of magnetic field orientation, following the interference paths along the hinge modes that are allowed by topology and symmetry. Our findings reveal the quantum transport response of topological hinge modes with both topological nature and quantum coherence, which can eventually be applied to the development of efficient topological electronic devices.

Original languageEnglish (US)
Pages (from-to)776-782
Number of pages7
JournalNature Physics
Issue number5
StatePublished - May 2024

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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