Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

X. Fu, Q. Shi, M. A. Zudov, Y. J. Chung, K. W. Baldwin, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density (ne>4×1011cm-2) which is expected to favor QHS orientation along the unconventional 110 crystal axis and along the in-plane magnetic field B. Surprisingly, we find that at B=0 QHSs in our samples are aligned along the 110 direction and can be reoriented only perpendicular to B. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to B, while quantum confinement of the 2DEG likely plays an important role.

Original languageEnglish (US)
Article number205418
JournalPhysical Review B
Issue number20
StatePublished - Nov 26 2018
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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