Quantum Hall ferromagnetism in a two-valley strained Si quantum well

K. Lai, W. Pan, D. C. Tsui, S. Lyon, M. Mühlberger, F. Schäffler

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Tilted field magnetotransport study was performed in a two-valley strained Si quantum well and hysteretic diagonal resistance spikes were observed near the coincidence angles. The spike around filling factor ν = 3 develops into a giant feature when it moves to the high-field edge of the quantum Hall (QH) state and quenches for higher tilt angles. When the spike is most prominent, its peak resistance is temperature independent from T∼20 mK up to 0.3 K, which is different from the critical behavior previously reported near the Curie temperature of the QH ferromagnet in AlAs quantum wells. Our data suggest a strong interplay between spins and valleys near the coincidence.

Original languageEnglish (US)
Pages (from-to)176-178
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-2
StatePublished - Aug 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


  • Quantum Hall ferromagnetism
  • Si quantum well
  • Valley degeneracy


Dive into the research topics of 'Quantum Hall ferromagnetism in a two-valley strained Si quantum well'. Together they form a unique fingerprint.

Cite this