Quantum Hall effect transitions in a bilayer electron system in tilted magnetic fields

T. S. Lay, T. Jungwirth, L. Smrčka, M. Shayegan

Research output: Contribution to journalArticle

Abstract

The v = 2/3 fractional quantum Hall effect (FQHE) in a wide, single quantum well subject to tilted magnetic fields makes a one-component to two-component transition induced by the in-plane component of the magnetic field. To analyze the experimental data we make a self-consistent, local-density-approximation calculation of the electronic structure of the wide quantum well in tilted magnetic fields. Our results are quantitatively consistent with the earlier experimental work on the density driven one-component to two-component FQHE transition in this system.

Original languageEnglish (US)
Pages (from-to)832-835
Number of pages4
JournalPhysica B: Condensed Matter
Volume249-251
DOIs
StatePublished - Jun 17 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Double layer electron system
  • Quantum Hall effect
  • Quantum wells
  • Tilted magnetic fields

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