Quantum hall effect in AlAs 2D electron systems

E. P. De Poortere; E. Tutuc; Y. P. Shkolnikov; K. Vakili; M. Shayegan; E. Palm; T. Murphy

doi:10.1142/s0217979202013201

Quantum hall effect in AlAs 2D electron systems

E. P. De Poortere, E. Tutuc, Y. P. Shkolnikov, K. Vakili, M. Shayegan, E. Palm, T. Murphy

Research output: Contribution to journal › Article › peer-review

Abstract

We report on fabrication of two-dimensional electrons in AlAs quantum wells with mobilities up to 31 m²/Vs. Magnetoresistance measurements reveal fractional quantum Hall states at high-order filling factors, and up to v = 11/3. Shubnikov-de Haas oscillations of high-density samples suggest that electrons occupy two X-point valleys. We also study properties of hysteretic resistance spikes occurring at transitions between quantum Hall ferromagnets in AlAs quantum wells, and show that the spike hysteresis depends sensitively on the number of occupied energy levels involved in the transition.

Original language	English (US)
Pages (from-to)	2917-2922
Number of pages	6
Journal	International Journal of Modern Physics B
Volume	16
Issue number	20-22
DOIs	https://doi.org/10.1142/s0217979202013201
State	Published - Aug 30 2002

All Science Journal Classification (ASJC) codes

Statistical and Nonlinear Physics
Condensed Matter Physics

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title = "Quantum hall effect in AlAs 2D electron systems",

abstract = "We report on fabrication of two-dimensional electrons in AlAs quantum wells with mobilities up to 31 m2/Vs. Magnetoresistance measurements reveal fractional quantum Hall states at high-order filling factors, and up to v = 11/3. Shubnikov-de Haas oscillations of high-density samples suggest that electrons occupy two X-point valleys. We also study properties of hysteretic resistance spikes occurring at transitions between quantum Hall ferromagnets in AlAs quantum wells, and show that the spike hysteresis depends sensitively on the number of occupied energy levels involved in the transition.",

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AU - De Poortere, E. P.

AU - Tutuc, E.

AU - Shkolnikov, Y. P.

AU - Vakili, K.

AU - Shayegan, M.

AU - Palm, E.

AU - Murphy, T.

PY - 2002/8/30

Y1 - 2002/8/30

N2 - We report on fabrication of two-dimensional electrons in AlAs quantum wells with mobilities up to 31 m2/Vs. Magnetoresistance measurements reveal fractional quantum Hall states at high-order filling factors, and up to v = 11/3. Shubnikov-de Haas oscillations of high-density samples suggest that electrons occupy two X-point valleys. We also study properties of hysteretic resistance spikes occurring at transitions between quantum Hall ferromagnets in AlAs quantum wells, and show that the spike hysteresis depends sensitively on the number of occupied energy levels involved in the transition.

AB - We report on fabrication of two-dimensional electrons in AlAs quantum wells with mobilities up to 31 m2/Vs. Magnetoresistance measurements reveal fractional quantum Hall states at high-order filling factors, and up to v = 11/3. Shubnikov-de Haas oscillations of high-density samples suggest that electrons occupy two X-point valleys. We also study properties of hysteretic resistance spikes occurring at transitions between quantum Hall ferromagnets in AlAs quantum wells, and show that the spike hysteresis depends sensitively on the number of occupied energy levels involved in the transition.

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Quantum hall effect in AlAs 2D electron systems

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