Quantum hall effect in AlAs 2D electron systems

E. P. De Poortere, E. Tutuc, Y. P. Shkolnikov, K. Vakili, M. Shayegan, E. Palm, T. Murphy

Research output: Contribution to journalArticle

Abstract

We report on fabrication of two-dimensional electrons in AlAs quantum wells with mobilities up to 31 m2/Vs. Magnetoresistance measurements reveal fractional quantum Hall states at high-order filling factors, and up to v = 11/3. Shubnikov-de Haas oscillations of high-density samples suggest that electrons occupy two X-point valleys. We also study properties of hysteretic resistance spikes occurring at transitions between quantum Hall ferromagnets in AlAs quantum wells, and show that the spike hysteresis depends sensitively on the number of occupied energy levels involved in the transition.

Original languageEnglish (US)
Pages (from-to)2917-2922
Number of pages6
JournalInternational Journal of Modern Physics B
Volume16
Issue number20-22
DOIs
StatePublished - Aug 30 2002

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

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    De Poortere, E. P., Tutuc, E., Shkolnikov, Y. P., Vakili, K., Shayegan, M., Palm, E., & Murphy, T. (2002). Quantum hall effect in AlAs 2D electron systems. International Journal of Modern Physics B, 16(20-22), 2917-2922. https://doi.org/10.1142/s0217979202013201