Abstract
We report magnetotransport measurements in a low-disorder three-layer electron system in a GaAs/AlxGa1-xAs triple quantum-well structure. Fine adjustment of densities in different layers is achieved with the use of front and back gates and by monitoring the capacitance-voltage and low-field Shubnikov-de Haas data. At intermediate fields the diagonal resistance (Rxx) shows strong minima at every third integer filling factor, ν=3, 6, 9, and 12, consistent with the subband structure. At higher fields, we observe deep Rxx minima at ν=7/5 and 5/7, suggesting anomalously strong 7/5 and 5/7 fractional quantum Hall states in this triple-layer system.
Original language | English (US) |
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Pages (from-to) | 9776-9779 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 46 |
Issue number | 15 |
DOIs | |
State | Published - 1992 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics