Quantum dot lasing in the strong coupling regime in semiconductor microcavities

P. G. Lagoudakis; M. D. Martin; J. J. Baumberg; G. Malpuech; A. Kavokin; L. N. Pfeiffer

Quantum dot lasing in the strong coupling regime in semiconductor microcavities

P. G. Lagoudakis, M. D. Martin, J. J. Baumberg, G. Malpuech, A. Kavokin, L. N. Pfeiffer

Research output: Contribution to conference › Paper › peer-review

Abstract

A clear evidence of the simultaneous presence of the perturbative and non-perturbative regimes under the same optical excitation in semiconductor MCs was observed. An unambiguous anti-crossing behavior of the coupled bare cavity and exciton modes, characteristic of the strong-coupling regime, while between these eigenstates of the system a new strong line appears whose intensity was exponentially dependent on the pumping power was obtained. It was shown that the extra mode results from the population inversion of highly localized exciton states that behave as quantum-dot-like trap in the plane of the quantum well.

Original language	English (US)
Pages	QTuJ4/1
State	Published - 2003
Externally published	Yes
Event	Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States Duration: Jun 1 2003 → Jun 6 2003

Other

Other	Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
Country/Territory	United States
City	Baltimore, MD.
Period	6/1/03 → 6/6/03

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

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title = "Quantum dot lasing in the strong coupling regime in semiconductor microcavities",

abstract = "A clear evidence of the simultaneous presence of the perturbative and non-perturbative regimes under the same optical excitation in semiconductor MCs was observed. An unambiguous anti-crossing behavior of the coupled bare cavity and exciton modes, characteristic of the strong-coupling regime, while between these eigenstates of the system a new strong line appears whose intensity was exponentially dependent on the pumping power was obtained. It was shown that the extra mode results from the population inversion of highly localized exciton states that behave as quantum-dot-like trap in the plane of the quantum well.",

author = "Lagoudakis, {P. G.} and Martin, {M. D.} and Baumberg, {J. J.} and G. Malpuech and A. Kavokin and Pfeiffer, {L. N.}",

year = "2003",

language = "English (US)",

pages = "QTuJ4/1",

note = "Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) ; Conference date: 01-06-2003 Through 06-06-2003",

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TY - CONF

T1 - Quantum dot lasing in the strong coupling regime in semiconductor microcavities

AU - Lagoudakis, P. G.

AU - Martin, M. D.

AU - Baumberg, J. J.

AU - Malpuech, G.

AU - Kavokin, A.

AU - Pfeiffer, L. N.

PY - 2003

Y1 - 2003

N2 - A clear evidence of the simultaneous presence of the perturbative and non-perturbative regimes under the same optical excitation in semiconductor MCs was observed. An unambiguous anti-crossing behavior of the coupled bare cavity and exciton modes, characteristic of the strong-coupling regime, while between these eigenstates of the system a new strong line appears whose intensity was exponentially dependent on the pumping power was obtained. It was shown that the extra mode results from the population inversion of highly localized exciton states that behave as quantum-dot-like trap in the plane of the quantum well.

AB - A clear evidence of the simultaneous presence of the perturbative and non-perturbative regimes under the same optical excitation in semiconductor MCs was observed. An unambiguous anti-crossing behavior of the coupled bare cavity and exciton modes, characteristic of the strong-coupling regime, while between these eigenstates of the system a new strong line appears whose intensity was exponentially dependent on the pumping power was obtained. It was shown that the extra mode results from the population inversion of highly localized exciton states that behave as quantum-dot-like trap in the plane of the quantum well.

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UR - http://www.scopus.com/inward/citedby.url?scp=1542608352&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:1542608352

SP - QTuJ4/1

T2 - Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)

Y2 - 1 June 2003 through 6 June 2003

ER -

Quantum dot lasing in the strong coupling regime in semiconductor microcavities

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All Science Journal Classification (ASJC) codes

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