Quantum devices, MBE technology for the 21st century

A. Y. Cho; D. L. Sivco; H. M. Ng; Claire F. Gmachl; A. Tredicucci; A. L. Hutchinson; S. N.G. Chu; F. Capasso

doi:10.1016/S0022-0248(01)00623-6

Quantum devices, MBE technology for the 21st century

A. Y. Cho, D. L. Sivco, H. M. Ng, Claire F. Gmachl, A. Tredicucci, A. L. Hutchinson, S. N.G. Chu, F. Capasso

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

Many talks of molecular beam epitaxy as an important technology for the mass production of quantum devices will be presented in this conference. This talk will concentrate on the development and the unique features of quantum cascade lasers such as high-power output, tuning characteristics, and the extension to GaN material.

Original language	English (US)
Pages (from-to)	1-7
Number of pages	7
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00623-6
State	Published - Jul 2001
Event	11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: Sep 11 2000 → Sep 15 2000

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

B1. Nitrides
B2. Semiconducting III-V materials
B3. Heterojunction semiconductor devices
B3. Laser diodes

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10.1016/S0022-0248(01)00623-6

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title = "Quantum devices, MBE technology for the 21st century",

abstract = "Many talks of molecular beam epitaxy as an important technology for the mass production of quantum devices will be presented in this conference. This talk will concentrate on the development and the unique features of quantum cascade lasers such as high-power output, tuning characteristics, and the extension to GaN material.",

keywords = "B1. Nitrides, B2. Semiconducting III-V materials, B3. Heterojunction semiconductor devices, B3. Laser diodes",

author = "Cho, {A. Y.} and Sivco, {D. L.} and Ng, {H. M.} and Gmachl, {Claire F.} and A. Tredicucci and Hutchinson, {A. L.} and Chu, {S. N.G.} and F. Capasso",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00623-6",

language = "English (US)",

volume = "227-228",

pages = "1--7",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

note = "11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

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TY - JOUR

T1 - Quantum devices, MBE technology for the 21st century

AU - Cho, A. Y.

AU - Sivco, D. L.

AU - Ng, H. M.

AU - Gmachl, Claire F.

AU - Tredicucci, A.

AU - Hutchinson, A. L.

AU - Chu, S. N.G.

AU - Capasso, F.

PY - 2001/7

Y1 - 2001/7

N2 - Many talks of molecular beam epitaxy as an important technology for the mass production of quantum devices will be presented in this conference. This talk will concentrate on the development and the unique features of quantum cascade lasers such as high-power output, tuning characteristics, and the extension to GaN material.

AB - Many talks of molecular beam epitaxy as an important technology for the mass production of quantum devices will be presented in this conference. This talk will concentrate on the development and the unique features of quantum cascade lasers such as high-power output, tuning characteristics, and the extension to GaN material.

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

KW - B3. Heterojunction semiconductor devices

KW - B3. Laser diodes

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U2 - 10.1016/S0022-0248(01)00623-6

DO - 10.1016/S0022-0248(01)00623-6

M3 - Conference article

AN - SCOPUS:0035398135

SN - 0022-0248

VL - 227-228

SP - 1

EP - 7

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -

Quantum devices, MBE technology for the 21st century

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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