Quantum devices, MBE technology for the 21st century

A. Y. Cho, D. L. Sivco, H. M. Ng, Claire F. Gmachl, A. Tredicucci, A. L. Hutchinson, S. N.G. Chu, F. Capasso

Research output: Contribution to journalConference article

16 Scopus citations

Abstract

Many talks of molecular beam epitaxy as an important technology for the mass production of quantum devices will be presented in this conference. This talk will concentrate on the development and the unique features of quantum cascade lasers such as high-power output, tuning characteristics, and the extension to GaN material.

Original languageEnglish (US)
Pages (from-to)1-7
Number of pages7
JournalJournal of Crystal Growth
Volume227-228
DOIs
StatePublished - Jul 1 2001
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: Sep 11 2000Sep 15 2000

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • B1. Nitrides
  • B2. Semiconducting III-V materials
  • B3. Heterojunction semiconductor devices
  • B3. Laser diodes

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    Cho, A. Y., Sivco, D. L., Ng, H. M., Gmachl, C. F., Tredicucci, A., Hutchinson, A. L., Chu, S. N. G., & Capasso, F. (2001). Quantum devices, MBE technology for the 21st century. Journal of Crystal Growth, 227-228, 1-7. https://doi.org/10.1016/S0022-0248(01)00623-6