Quantum confinement effects in strained silicon-germanium alloy quantum wells

X. Xiao; C. W. Liu; J. C. Sturm; L. C. Lenchyshyn; M. L.W. Thewalt; R. B. Gregory; P. Fejes

doi:10.1063/1.107061

Quantum confinement effects in strained silicon-germanium alloy quantum wells

X. Xiao
, C. W. Liu
, J. C. Sturm
, L. C. Lenchyshyn
, M. L.W. Thewalt
, R. B. Gregory
, P. Fejes

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Abstract

We report the first detailed study of quantum confinement shifts of band-edge photoluminescence energies in Si/strained Si_1-xGe _x/Si single quantum wells. A quantum confinement energy of up to 45 meV has been observed for quantum wells as small as 33 Å in width. The experimental results are in good agreement with a calculation of the hole confinement energies. The hole energy levels in quantum wells were obtained by numerically solving effective-mass equations with proper matching boundary conditions at interfaces using a 6×6 Luttinger-Kohn Hamiltonian. Both strain and spin-orbit interactions were included in the calculation.

Original language	English (US)
Pages (from-to)	2135-2137
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	17
DOIs	https://doi.org/10.1063/1.107061
State	Published - 1992

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.107061

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@article{751bc065044c42899c9067d972c295ec,

title = "Quantum confinement effects in strained silicon-germanium alloy quantum wells",

abstract = "We report the first detailed study of quantum confinement shifts of band-edge photoluminescence energies in Si/strained Si1-xGe x/Si single quantum wells. A quantum confinement energy of up to 45 meV has been observed for quantum wells as small as 33 {\AA} in width. The experimental results are in good agreement with a calculation of the hole confinement energies. The hole energy levels in quantum wells were obtained by numerically solving effective-mass equations with proper matching boundary conditions at interfaces using a 6×6 Luttinger-Kohn Hamiltonian. Both strain and spin-orbit interactions were included in the calculation.",

author = "X. Xiao and Liu, \{C. W.\} and Sturm, \{J. C.\} and Lenchyshyn, \{L. C.\} and Thewalt, \{M. L.W.\} and Gregory, \{R. B.\} and P. Fejes",

year = "1992",

doi = "10.1063/1.107061",

language = "English (US)",

volume = "60",

pages = "2135--2137",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

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TY - JOUR

T1 - Quantum confinement effects in strained silicon-germanium alloy quantum wells

AU - Xiao, X.

AU - Liu, C. W.

AU - Sturm, J. C.

AU - Lenchyshyn, L. C.

AU - Thewalt, M. L.W.

AU - Gregory, R. B.

AU - Fejes, P.

PY - 1992

Y1 - 1992

N2 - We report the first detailed study of quantum confinement shifts of band-edge photoluminescence energies in Si/strained Si1-xGe x/Si single quantum wells. A quantum confinement energy of up to 45 meV has been observed for quantum wells as small as 33 Å in width. The experimental results are in good agreement with a calculation of the hole confinement energies. The hole energy levels in quantum wells were obtained by numerically solving effective-mass equations with proper matching boundary conditions at interfaces using a 6×6 Luttinger-Kohn Hamiltonian. Both strain and spin-orbit interactions were included in the calculation.

AB - We report the first detailed study of quantum confinement shifts of band-edge photoluminescence energies in Si/strained Si1-xGe x/Si single quantum wells. A quantum confinement energy of up to 45 meV has been observed for quantum wells as small as 33 Å in width. The experimental results are in good agreement with a calculation of the hole confinement energies. The hole energy levels in quantum wells were obtained by numerically solving effective-mass equations with proper matching boundary conditions at interfaces using a 6×6 Luttinger-Kohn Hamiltonian. Both strain and spin-orbit interactions were included in the calculation.

UR - https://www.scopus.com/pages/publications/0013057105

UR - https://www.scopus.com/pages/publications/0013057105#tab=citedBy

U2 - 10.1063/1.107061

DO - 10.1063/1.107061

M3 - Article

AN - SCOPUS:0013057105

SN - 0003-6951

VL - 60

SP - 2135

EP - 2137

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Quantum confinement effects in strained silicon-germanium alloy quantum wells

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