Quantum confinement effects in strained silicon-germanium alloy quantum wells

X. Xiao, C. W. Liu, J. C. Sturm, L. C. Lenchyshyn, M. L.W. Thewalt, R. B. Gregory, P. Fejes

Research output: Contribution to journalArticlepeer-review

62 Scopus citations

Abstract

We report the first detailed study of quantum confinement shifts of band-edge photoluminescence energies in Si/strained Si1-xGe x/Si single quantum wells. A quantum confinement energy of up to 45 meV has been observed for quantum wells as small as 33 Å in width. The experimental results are in good agreement with a calculation of the hole confinement energies. The hole energy levels in quantum wells were obtained by numerically solving effective-mass equations with proper matching boundary conditions at interfaces using a 6×6 Luttinger-Kohn Hamiltonian. Both strain and spin-orbit interactions were included in the calculation.

Original languageEnglish (US)
Pages (from-to)2135-2137
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number17
DOIs
StatePublished - 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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