Quantum coherence in a one-electron semiconductor charge qubit

K. D. Petersson, J. R. Petta, H. Lu, A. C. Gossard

Research output: Contribution to journalArticle

204 Scopus citations

Abstract

We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and noninvasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ∼7ns at the charge degeneracy point, where the qubit level splitting is first-order insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with numerical simulations and predictions from a 1/f noise model.

Original languageEnglish (US)
Article number246804
JournalPhysical review letters
Volume105
Issue number24
DOIs
StatePublished - Dec 8 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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