Quantized Hall insulator

M. Hilke; D. Shahar; S. H. Song; D. C. Tsui; M. Shayegan; Y. H. Xie

doi:10.1002/(SICI)1521-3889(199911)8:7/9<603::AID-ANDP603>3.0.CO;2-A

Quantized Hall insulator

M. Hilke, D. Shahar, S. H. Song, D. C. Tsui, M. Shayegan, Y. H. Xie

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

The quantized Hall insulator is characterized by vanishing conductivities and a quantized Hall resistance. For low mobility samples, the quantized Hall insulator is obtained when the magnetic field is increased well above the ν=1 quantum Hall state. For higher mobility samples, a similar quantization is observed when the magnetic field is increased above the ν = 1/3 fractional quantum Hall states. This quantization, throughout the quantum Hall liquid-to-insulator transition, leads to a perfect semicircle relation for the diagonal and Hall conductivities. The measurements were performed in Ge/SiGe quantum Wells and in n-type InP/InGaAs and GaAs/AlGaAs heterostructures.

Original language	English (US)
Pages (from-to)	603-608
Number of pages	6
Journal	Annalen der Physik (Leipzig)
Volume	8
Issue number	7
DOIs	https://doi.org/10.1002/(SICI)1521-3889(199911)8:7/9<603::AID-ANDP603>3.0.CO;2-A
State	Published - 1999
Event	Proceedings of the LOCALIZATION 1999 International Conference on 'Disorder and Interaction in Transport Phenomena' - Hamburg, Ger Duration: Jul 29 1999 → Aug 3 1999

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Access to Document

10.1002/(SICI)1521-3889(199911)8:7/9<603::AID-ANDP603>3.0.CO;2-A

Cite this

@article{80c9cada3775491895b2e3d7c59f0405,

title = "Quantized Hall insulator",

abstract = "The quantized Hall insulator is characterized by vanishing conductivities and a quantized Hall resistance. For low mobility samples, the quantized Hall insulator is obtained when the magnetic field is increased well above the ν=1 quantum Hall state. For higher mobility samples, a similar quantization is observed when the magnetic field is increased above the ν = 1/3 fractional quantum Hall states. This quantization, throughout the quantum Hall liquid-to-insulator transition, leads to a perfect semicircle relation for the diagonal and Hall conductivities. The measurements were performed in Ge/SiGe quantum Wells and in n-type InP/InGaAs and GaAs/AlGaAs heterostructures.",

author = "M. Hilke and D. Shahar and Song, {S. H.} and Tsui, {D. C.} and M. Shayegan and Xie, {Y. H.}",

year = "1999",

doi = "10.1002/(SICI)1521-3889(199911)8:7/9<603::AID-ANDP603>3.0.CO;2-A",

language = "English (US)",

volume = "8",

pages = "603--608",

journal = "Annalen der Physik (Leipzig)",

issn = "0003-3804",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "Proceedings of the LOCALIZATION 1999 International Conference on 'Disorder and Interaction in Transport Phenomena' ; Conference date: 29-07-1999 Through 03-08-1999",

}

TY - JOUR

T1 - Quantized Hall insulator

AU - Hilke, M.

AU - Shahar, D.

AU - Song, S. H.

AU - Tsui, D. C.

AU - Shayegan, M.

AU - Xie, Y. H.

PY - 1999

Y1 - 1999

N2 - The quantized Hall insulator is characterized by vanishing conductivities and a quantized Hall resistance. For low mobility samples, the quantized Hall insulator is obtained when the magnetic field is increased well above the ν=1 quantum Hall state. For higher mobility samples, a similar quantization is observed when the magnetic field is increased above the ν = 1/3 fractional quantum Hall states. This quantization, throughout the quantum Hall liquid-to-insulator transition, leads to a perfect semicircle relation for the diagonal and Hall conductivities. The measurements were performed in Ge/SiGe quantum Wells and in n-type InP/InGaAs and GaAs/AlGaAs heterostructures.

AB - The quantized Hall insulator is characterized by vanishing conductivities and a quantized Hall resistance. For low mobility samples, the quantized Hall insulator is obtained when the magnetic field is increased well above the ν=1 quantum Hall state. For higher mobility samples, a similar quantization is observed when the magnetic field is increased above the ν = 1/3 fractional quantum Hall states. This quantization, throughout the quantum Hall liquid-to-insulator transition, leads to a perfect semicircle relation for the diagonal and Hall conductivities. The measurements were performed in Ge/SiGe quantum Wells and in n-type InP/InGaAs and GaAs/AlGaAs heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=0033336891&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033336891&partnerID=8YFLogxK

U2 - 10.1002/(SICI)1521-3889(199911)8:7/9<603::AID-ANDP603>3.0.CO;2-A

DO - 10.1002/(SICI)1521-3889(199911)8:7/9<603::AID-ANDP603>3.0.CO;2-A

M3 - Conference article

AN - SCOPUS:0033336891

SN - 0003-3804

VL - 8

SP - 603

EP - 608

JO - Annalen der Physik (Leipzig)

JF - Annalen der Physik (Leipzig)

IS - 7

T2 - Proceedings of the LOCALIZATION 1999 International Conference on 'Disorder and Interaction in Transport Phenomena'

Y2 - 29 July 1999 through 3 August 1999

ER -

Quantized Hall insulator

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this