Quantized Hall effect and weak localization effects in two-dimensional HgTe-CdTe superiattices

N. P. Ong, John K. Moyle, J. Bajaj, J. T. Cheung

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23 Scopus citations


Electronic transport in the two-dimensional gas formed in superlattices of HgTe-CdTe has been investigated in both the weak-field (B < 4 mT) and the intense-field regime (up to 29 T). We find that in high-mobility samples (53000 cm2/V s) coherent backscattering effects (weak localization) are easily observable in the first regime while in the second regime quantized Hall steps are obtained in the same sample. The weak localization results have been exploited to obtain the temperature dependence of the electron dephasing rate and the spin-orbit scattering rate. Unlike AIGaAs-GaAs and Si-metal-oxide semiconductor field-effect transistor systems the spin-orbit scattering rate is very large (0.6 times the elastic scattering rate.) The quantized Hall-effect data are complicated by three factors which we discuss. These complications prevent an unambiguous interpretation at present, although differences from the AIGaAs-GaAs superlattice results are observed.

Original languageEnglish (US)
Pages (from-to)3079-3084
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number5
StatePublished - Sep 1987

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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