Quantized conductance in quantum wires with gate-controlled width and electron density

B. E. Kane, G. R. Facer, A. S. Dzurak, N. E. Lumpkin, R. G. Clark, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalReview articlepeer-review

140 Scopus citations

Abstract

We describe quantum wires and point contacts fabricated in GaAs/AlxGa1-xAs heterostructures that are free of the disorder introduced by modulation doping and in which the electron density and the confining potential are separately adjustable by lithographically defined gates. We observe conductance plateaus quantized near even multiples of e2/h in 2 μm wires and up to 15 conductance steps in 5 μm wires at temperatures below 1 K. Near the conductance threshold the quantum point contact and the 2 μm wire both show additional structure below 2e2/h.

Original languageEnglish (US)
Pages (from-to)3506-3508
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number26
DOIs
StatePublished - 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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